All MOSFET. RFG40N10LE Datasheet

 

RFG40N10LE Datasheet and Replacement


   Type Designator: RFG40N10LE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO247
 

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RFG40N10LE Datasheet (PDF)

 ..1. Size:410K  intersil
 rfg40n10le rfp40n10le rf1s40n10lesm.pdf pdf_icon

RFG40N10LE

RFG40N10LE, RFP40N10LE, RF1S40N10LESMData Sheet October 1999 File Number 4061.540A, 100V, 0.040 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 40A, 100VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesappr

 6.1. Size:369K  fairchild semi
 rfg40n10 rfp40n10 rf1s40n10-sm.pdf pdf_icon

RFG40N10LE

RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

Datasheet: RFD8P06ESM , RFD8P06LE , RFD8P06LESM , RFF60P06 , RFF70N06 , RFG30P05 , RFG30P06 , RFG40N10 , AON7408 , RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 , RFG60P05E , RFG60P06E .

History: IXTM12N45A | EM6K7 | ELM56801EA | DMP6110SSD | KI2300 | APTC60DAM18CTG | HUFA75829D3S

Keywords - RFG40N10LE MOSFET datasheet

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