RFG40N10LE Specs and Replacement

Type Designator: RFG40N10LE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO247

RFG40N10LE substitution

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RFG40N10LE datasheet

 ..1. Size:410K  intersil
 rfg40n10le rfp40n10le rf1s40n10lesm.pdf pdf_icon

RFG40N10LE

RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level Features N-Channel Power MOSFETs 40A, 100V These N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes appr... See More ⇒

 6.1. Size:369K  fairchild semi
 rfg40n10 rfp40n10 rf1s40n10-sm.pdf pdf_icon

RFG40N10LE

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs 40A, 100V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040 the MegaFET process. This process, which uses feature UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti... See More ⇒

Detailed specifications: RFD8P06ESM, RFD8P06LE, RFD8P06LESM, RFF60P06, RFF70N06, RFG30P05, RFG30P06, RFG40N10, IRFP250N, RFG45N06, RFG45N06LE, RFG50N05L, RFG50N06, RFG50N06LE, RFG60P03, RFG60P05E, RFG60P06E

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