RFG40N10LE Datasheet and Replacement
Type Designator: RFG40N10LE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO247
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RFG40N10LE Datasheet (PDF)
rfg40n10le rfp40n10le rf1s40n10lesm.pdf

RFG40N10LE, RFP40N10LE, RF1S40N10LESMData Sheet October 1999 File Number 4061.540A, 100V, 0.040 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 40A, 100VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesappr
rfg40n10 rfp40n10 rf1s40n10-sm.pdf

RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRFI7536G | WMM11N80M3 | FDMS9620S
Keywords - RFG40N10LE MOSFET datasheet
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History: IRFI7536G | WMM11N80M3 | FDMS9620S



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