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SIZ728DT Specs and Replacement

Type Designator: SIZ728DT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm

Package: POWERPAIR6X3.7

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SIZ728DT datasheet

 ..1. Size:205K  vishay
 siz728dt.pdf pdf_icon

SIZ728DT

New Product SiZ728DT Vishay Siliconix N-Channel 25 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition TrenchFET Power MOSFETs 0.0077 at VGS = 10 V 16a 100 % Rg and UIS Tested Channel-1 25 8.1 nC 0.0110 at VGS = 4.5 V 16a Compliant to RoHS Directive 2002/95/EC 0.0035 at VGS =... See More ⇒

Detailed specifications: GP28S50GN3P, GP28S50GN247, IPA70R360P7S, IPSA70R360P7S, IRF50N06, TK80E08K3, TK150E09NE, TSA9N90M, IRFP250, SIZ730DT, SIZ790DT, SIZ900DT, SIZ902DT, SIZ904DT, SIZ910DT, SIZ914DT, SIZ916DT

Keywords - SIZ728DT MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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