All MOSFET. SIZ728DT Datasheet

 

SIZ728DT Datasheet and Replacement


   Type Designator: SIZ728DT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
   Package: POWERPAIR6X3.7
 

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SIZ728DT Datasheet (PDF)

 ..1. Size:205K  vishay
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SIZ728DT

New ProductSiZ728DTVishay SiliconixN-Channel 25 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.) Definition TrenchFET Power MOSFETs0.0077 at VGS = 10 V 16a 100 % Rg and UIS TestedChannel-1 25 8.1 nC0.0110 at VGS = 4.5 V 16a Compliant to RoHS Directive 2002/95/EC0.0035 at VGS =

Datasheet: GP28S50GN3P , GP28S50GN247 , IPA70R360P7S , IPSA70R360P7S , IRF50N06 , TK80E08K3 , TK150E09NE , TSA9N90M , STF13NM60N , SIZ730DT , SIZ790DT , SIZ900DT , SIZ902DT , SIZ904DT , SIZ910DT , SIZ914DT , SIZ916DT .

History: IRFB52N15DPBF | SSF5NS70UF | SSF6014 | SI6466ADQ | KMB4D8DN55Q | WMS032N04LG2 | IRFBA1405PPBF

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