SIZ730DT Specs and Replacement
Type Designator: SIZ730DT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 185 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
Package: POWERPAIR6X3.7
SIZ730DT substitution
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SIZ730DT datasheet
siz730dt.pdf
New Product SiZ730DT Vishay Siliconix N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.0093 at VGS = 10 V 16a TrenchFET Power MOSFETs Channel-1 30 7.7 nC 100 % Rg and UIS Tested 0.0130 at VGS = 4.5 V 16a Compliant to RoHS Directive 2002/95/EC 0.0039 at VGS ... See More ⇒
Detailed specifications: GP28S50GN247, IPA70R360P7S, IPSA70R360P7S, IRF50N06, TK80E08K3, TK150E09NE, TSA9N90M, SIZ728DT, IRF1407, SIZ790DT, SIZ900DT, SIZ902DT, SIZ904DT, SIZ910DT, SIZ914DT, SIZ916DT, SIZ918DT
Keywords - SIZ730DT MOSFET specs
SIZ730DT cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: JANSR2N7401 | ELM34803AA-N
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