RFG45N06 Datasheet and Replacement
Type Designator: RFG45N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 131 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO247
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RFG45N06 Datasheet (PDF)
rfg45n06 rfp45n06 rf1s45n06sm.pdf
RFG45N06, RFP45N06, RF1S45N06SMData Sheet January 200245A, 60V, 0.028 Ohm, N-Channel Power FeaturesMOSFETs 45A, 60VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.028power field effect transistors. They are advanced power Temperature Compensating PSPICE ModelMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CEU02N7G-1 | CED05N8 | AON6794 | IRLR024 | PSMN4R8-100PSE | BUZ84 | BL10N70-A
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History: CEU02N7G-1 | CED05N8 | AON6794 | IRLR024 | PSMN4R8-100PSE | BUZ84 | BL10N70-A
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