RFG45N06 Datasheet and Replacement
Type Designator: RFG45N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 131 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO247
RFG45N06 substitution
RFG45N06 Datasheet (PDF)
rfg45n06 rfp45n06 rf1s45n06sm.pdf
RFG45N06, RFP45N06, RF1S45N06SMData Sheet January 200245A, 60V, 0.028 Ohm, N-Channel Power FeaturesMOSFETs 45A, 60VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.028power field effect transistors. They are advanced power Temperature Compensating PSPICE ModelMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the
Datasheet: RFD8P06LE , RFD8P06LESM , RFF60P06 , RFF70N06 , RFG30P05 , RFG30P06 , RFG40N10 , RFG40N10LE , 7N65 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 , RFG60P05E , RFG60P06E , RFG70N06 .
History: SL75N06Q | IXFH96N15P | FMI80N10T2 | AO4614 | AP03N40I-HF
Keywords - RFG45N06 MOSFET datasheet
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History: SL75N06Q | IXFH96N15P | FMI80N10T2 | AO4614 | AP03N40I-HF
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