SIZ920DT Datasheet and Replacement
Type Designator: SIZ920DT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm
Package: POWERPAIR6X5
SIZ920DT substitution
SIZ920DT Datasheet (PDF)
siz920dt.pdf

New Product SiZ920DTVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0071 at VGS = 10 V 40a Material categorization:Channel-1 30 10.5 nCFor definitions of compliance please see0.0089 at VGS = 4.5 V 40awww.vishay.com/doc?999120.0030
Datasheet: SIZ790DT , SIZ900DT , SIZ902DT , SIZ904DT , SIZ910DT , SIZ914DT , SIZ916DT , SIZ918DT , STF13NM60N , SK830321 , SK840303 , SK840316 , SK840317 , SK840318 , SK840319 , SK840320 , SK860314 .
History: STV160NF02LT4 | RTR030N05 | FQA13N50CF | NCE0130KA | 2SK3857MFV | JMSH0602PGQ | AONP38324
Keywords - SIZ920DT MOSFET datasheet
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History: STV160NF02LT4 | RTR030N05 | FQA13N50CF | NCE0130KA | 2SK3857MFV | JMSH0602PGQ | AONP38324



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