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SIZ920DT Specs and Replacement

Type Designator: SIZ920DT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm

Package: POWERPAIR6X5

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SIZ920DT datasheet

 ..1. Size:207K  vishay
 siz920dt.pdf pdf_icon

SIZ920DT

New Product SiZ920DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0071 at VGS = 10 V 40a Material categorization Channel-1 30 10.5 nC For definitions of compliance please see 0.0089 at VGS = 4.5 V 40a www.vishay.com/doc?99912 0.0030 ... See More ⇒

Detailed specifications: SIZ790DT, SIZ900DT, SIZ902DT, SIZ904DT, SIZ910DT, SIZ914DT, SIZ916DT, SIZ918DT, IRF520, SK830321, SK840303, SK840316, SK840317, SK840318, SK840319, SK840320, SK860314

Keywords - SIZ920DT MOSFET specs

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