All MOSFET. SIZ920DT Datasheet

 

SIZ920DT Datasheet and Replacement


   Type Designator: SIZ920DT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm
   Package: POWERPAIR6X5
 
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SIZ920DT Datasheet (PDF)

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SIZ920DT

New Product SiZ920DTVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0071 at VGS = 10 V 40a Material categorization:Channel-1 30 10.5 nCFor definitions of compliance please see0.0089 at VGS = 4.5 V 40awww.vishay.com/doc?999120.0030

Datasheet: SIZ790DT , SIZ900DT , SIZ902DT , SIZ904DT , SIZ910DT , SIZ914DT , SIZ916DT , SIZ918DT , CS150N03A8 , SK830321 , SK840303 , SK840316 , SK840317 , SK840318 , SK840319 , SK840320 , SK860314 .

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