RFG45N06LE Specs and Replacement

Type Designator: RFG45N06LE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO247

RFG45N06LE substitution

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RFG45N06LE datasheet

 ..1. Size:415K  1
 rfg45n06le rfp45n06le rf1s45n06le rf1s45n06lesm.pdf pdf_icon

RFG45N06LE

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 6.1. Size:372K  fairchild semi
 rfg45n06 rfp45n06 rf1s45n06sm.pdf pdf_icon

RFG45N06LE

RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, 0.028 Ohm, N-Channel Power Features MOSFETs 45A, 60V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.028 power field effect transistors. They are advanced power Temperature Compensating PSPICE Model MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the... See More ⇒

Detailed specifications: RFD8P06LESM, RFF60P06, RFF70N06, RFG30P05, RFG30P06, RFG40N10, RFG40N10LE, RFG45N06, IRF9540, RFG50N05L, RFG50N06, RFG50N06LE, RFG60P03, RFG60P05E, RFG60P06E, RFG70N06, RFG75N05E

Keywords - RFG45N06LE MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.