All MOSFET. RFG45N06LE Datasheet

 

RFG45N06LE Datasheet and Replacement


   Type Designator: RFG45N06LE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO247
 

 RFG45N06LE substitution

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RFG45N06LE Datasheet (PDF)

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RFG45N06LE

 6.1. Size:372K  fairchild semi
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RFG45N06LE

RFG45N06, RFP45N06, RF1S45N06SMData Sheet January 200245A, 60V, 0.028 Ohm, N-Channel Power FeaturesMOSFETs 45A, 60VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.028power field effect transistors. They are advanced power Temperature Compensating PSPICE ModelMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the

Datasheet: RFD8P06LESM , RFF60P06 , RFF70N06 , RFG30P05 , RFG30P06 , RFG40N10 , RFG40N10LE , RFG45N06 , K3569 , RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 , RFG60P05E , RFG60P06E , RFG70N06 , RFG75N05E .

History: MTW4N80E

Keywords - RFG45N06LE MOSFET datasheet

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