SKI07074
MOSFET. Datasheet pdf. Equivalent
Type Designator: SKI07074
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 135
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 85
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 91.6
nC
trⓘ - Rise Time: 10.1
nS
Cossⓘ -
Output Capacitance: 575
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0069
Ohm
Package:
TO-263
SKI07074
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SKI07074
Datasheet (PDF)
..1. Size:235K sanken-ele
ski07074.pdf 
75 V, 85 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET SKI07074 Features Package TO-263 V(BR)DSS --------------------------------- 75 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ---------- 6.9 m max. (VGS = 10 V, ID = 44.0 A) Qg ------42.9 nC (VGS = 4.5 V, VDS = 38 V, ID = 44.0 A) Low Total Gate
..2. Size:255K inchange semiconductor
ski07074.pdf
isc N-Channel MOSFET Transistor SKI07074FEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 6.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
9.1. Size:235K sanken-ele
ski07171.pdf
75 V, 46 A, 10.4 m Low RDS(ON) N ch Trench Power MOSFET SKI07171 Features Package TO-263 V(BR)DSS --------------------------------- 75 V (ID = 100 A) ID ---------------------------------------------------------- 46 A (4) D RDS(ON) -------- 14.1 m max. (VGS = 10 V, ID = 22.8 A) Qg ------15.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 22.8 A) Low Total Gate
9.2. Size:235K sanken-ele
ski07114.pdf
75 V, 62 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET SKI07114 Features Package TO-263 V(BR)DSS --------------------------------- 75 V (ID = 100 A) ID ---------------------------------------------------------- 62 A (4) D RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 31.2 A) Qg ------ 25.0nC (VGS = 4.5 V, VDS = 38 V, ID = 31.2 A) Low Total Gate
9.3. Size:255K inchange semiconductor
ski07171.pdf
isc N-Channel MOSFET Transistor SKI07171FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 14.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
9.4. Size:255K inchange semiconductor
ski07114.pdf
isc N-Channel MOSFET Transistor SKI07114FEATURESDrain Current I = 62A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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