SE6880 Datasheet and Replacement
Type Designator: SE6880
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 960 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO263 TO220 TO252
SE6880 substitution
SE6880 Datasheet (PDF)
se6880.pdf

Oct 2014 SE6880 N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 68V charge. RDS(ON) = 7m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See
se6880.pdf

Oct 2014 SE6880 N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 68V charge. RDS(ON) = 7m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See
se6880a.pdf

SE6880AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =70VDSoperation voltage. This device is suitable for R =6.3m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline
Datasheet: ITA08N65R , ME15N10G , MMF80R650P , NCE65T130D , NCE65T130 , NCE65T130F , NCEP60T12A , NTMFS4955N , IRFB4227 , SW50N06 , 2SK3642-ZK , BUZ384 , EMA09N03AN , FQB60N03L , FTP540 , MT4953 , NDP06N60Z .
History: IRF6201PBF
Keywords - SE6880 MOSFET datasheet
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History: IRF6201PBF



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