SE6880 - аналоги, параметры транзистора - Справочник транзисторов

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Oct 2014 SE6880 N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 68V charge. RDS(ON) = 7m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See

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SE6880A N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =70V DS operation voltage. This device is suitable for R =6.3m @V =10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline

Другие MOSFET... ITA08N65R , ME15N10G , MMF80R650P , NCE65T130D , NCE65T130 , NCE65T130F , NCEP60T12A , NTMFS4955N , 10N60 , SW50N06 , 2SK3642-ZK , BUZ384 , EMA09N03AN , FQB60N03L , FTP540 , MT4953 , NDP06N60Z .