All MOSFET. SW50N06 Datasheet

 

SW50N06 Datasheet and Replacement


   Type Designator: SW50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO220
 

 SW50N06 substitution

   - MOSFET ⓘ Cross-Reference Search

 

SW50N06 Datasheet (PDF)

 ..1. Size:345K  samwin
 sw50n06.pdf pdf_icon

SW50N06

SAMWIN SW50N06General DescriptionFeaturesThis power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This N-Channel MOSFETtechnology enable power MOSFET to have better BVDSS (Minimum) : 60Vcharacteristics, such as fast switching time, low on RDS(ON) (Maximum) : 0.023ohmresistance, low gate charge and especially excellent ID : 50 Aavalanche character

Datasheet: ME15N10G , MMF80R650P , NCE65T130D , NCE65T130 , NCE65T130F , NCEP60T12A , NTMFS4955N , SE6880 , P55NF06 , 2SK3642-ZK , BUZ384 , EMA09N03AN , FQB60N03L , FTP540 , MT4953 , NDP06N60Z , NTMFS4C09N .

History: AO3457

Keywords - SW50N06 MOSFET datasheet

 SW50N06 cross reference
 SW50N06 equivalent finder
 SW50N06 lookup
 SW50N06 substitution
 SW50N06 replacement

 

 
Back to Top

 


 
.