SW50N06 PDF and Equivalents Search

 

SW50N06 PDF Specs and Replacement


   Type Designator: SW50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO220
 

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SW50N06 PDF Specs

 ..1. Size:345K  samwin
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SW50N06

SAMWIN SW50N06 General Description Features This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This N-Channel MOSFET technology enable power MOSFET to have better BVDSS (Minimum) 60V characteristics, such as fast switching time, low on RDS(ON) (Maximum) 0.023ohm resistance, low gate charge and especially excellent ID 50 A avalanche character... See More ⇒

Detailed specifications: ME15N10G , MMF80R650P , NCE65T130D , NCE65T130 , NCE65T130F , NCEP60T12A , NTMFS4955N , SE6880 , AON6414A , 2SK3642-ZK , BUZ384 , EMA09N03AN , FQB60N03L , FTP540 , MT4953 , NDP06N60Z , NTMFS4C09N .

History: BUZ92

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