All MOSFET. SW50N06 Datasheet

 

SW50N06 Datasheet and Replacement


   Type Designator: SW50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO220
 

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SW50N06 Datasheet (PDF)

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SW50N06

SAMWIN SW50N06General DescriptionFeaturesThis power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This N-Channel MOSFETtechnology enable power MOSFET to have better BVDSS (Minimum) : 60Vcharacteristics, such as fast switching time, low on RDS(ON) (Maximum) : 0.023ohmresistance, low gate charge and especially excellent ID : 50 Aavalanche character

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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