SW50N06 Datasheet and Replacement
Type Designator: SW50N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO220
SW50N06 substitution
SW50N06 Datasheet (PDF)
sw50n06.pdf

SAMWIN SW50N06General DescriptionFeaturesThis power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This N-Channel MOSFETtechnology enable power MOSFET to have better BVDSS (Minimum) : 60Vcharacteristics, such as fast switching time, low on RDS(ON) (Maximum) : 0.023ohmresistance, low gate charge and especially excellent ID : 50 Aavalanche character
Datasheet: ME15N10G , MMF80R650P , NCE65T130D , NCE65T130 , NCE65T130F , NCEP60T12A , NTMFS4955N , SE6880 , IRFB4110 , 2SK3642-ZK , BUZ384 , EMA09N03AN , FQB60N03L , FTP540 , MT4953 , NDP06N60Z , NTMFS4C09N .
History: FXN65S55T | AUIRFZ44N | JBE102G | 840
Keywords - SW50N06 MOSFET datasheet
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History: FXN65S55T | AUIRFZ44N | JBE102G | 840



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