SW50N06 Datasheet and Replacement
Type Designator: SW50N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO220
SW50N06 substitution
SW50N06 Datasheet (PDF)
sw50n06.pdf

SAMWIN SW50N06General DescriptionFeaturesThis power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This N-Channel MOSFETtechnology enable power MOSFET to have better BVDSS (Minimum) : 60Vcharacteristics, such as fast switching time, low on RDS(ON) (Maximum) : 0.023ohmresistance, low gate charge and especially excellent ID : 50 Aavalanche character
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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