SW50N06 Datasheet. Specs and Replacement

Type Designator: SW50N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO220

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SW50N06 datasheet

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SW50N06

SAMWIN SW50N06 General Description Features This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This N-Channel MOSFET technology enable power MOSFET to have better BVDSS (Minimum) 60V characteristics, such as fast switching time, low on RDS(ON) (Maximum) 0.023ohm resistance, low gate charge and especially excellent ID 50 A avalanche character... See More ⇒

Detailed specifications: ME15N10G, MMF80R650P, NCE65T130D, NCE65T130, NCE65T130F, NCEP60T12A, NTMFS4955N, SE6880, 10N60, 2SK3642-ZK, BUZ384, EMA09N03AN, FQB60N03L, FTP540, MT4953, NDP06N60Z, NTMFS4C09N

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