EMA09N03AN PDF and Equivalents Search

 

EMA09N03AN Specs and Replacement

Type Designator: EMA09N03AN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO252

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EMA09N03AN datasheet

 ..1. Size:229K  china
 ema09n03an.pdf pdf_icon

EMA09N03AN

EMA09N03AN N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 25V RDSON (MAX.) 9m ID 50A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 20... See More ⇒

Detailed specifications: NCE65T130, NCE65T130F, NCEP60T12A, NTMFS4955N, SE6880, SW50N06, 2SK3642-ZK, BUZ384, P55NF06, FQB60N03L, FTP540, MT4953, NDP06N60Z, NTMFS4C09N, RU7588R3, SMP40N10, SWP30N06

Keywords - EMA09N03AN MOSFET specs

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