FQB60N03L Specs and Replacement
Type Designator: FQB60N03L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 51 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: TO263
FQB60N03L substitution
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FQB60N03L datasheet
fqb60n03l.pdf
October 2002 FQB60N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology Fast switching and features low gate charge while maintaining low on- rDS(ON) = 0.010 (Typ), VGS = 10V resistance. rDS(ON) = 0.017 (Typ), VGS = 5V Optimized for switching applications, this device improves the overa... See More ⇒
Detailed specifications: NCE65T130F, NCEP60T12A, NTMFS4955N, SE6880, SW50N06, 2SK3642-ZK, BUZ384, EMA09N03AN, 8205A, FTP540, MT4953, NDP06N60Z, NTMFS4C09N, RU7588R3, SMP40N10, SWP30N06, SWI30N06
Keywords - FQB60N03L MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AON6324 | 3N75 | BR40P03 | PHB32N06 | SMP40N10 | 2SK388 | 60NM60L-T47
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