All MOSFET. FQB60N03L Datasheet

 

FQB60N03L MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQB60N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 51 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO263

 FQB60N03L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB60N03L Datasheet (PDF)

 ..1. Size:183K  fairchild semi
 fqb60n03l.pdf

FQB60N03L FQB60N03L

October 2002FQB60N03LN-Channel Logic Level PWM Optimized Power MOSFETGeneral Description FeaturesThis device employs a new advanced MOSFET technology Fast switchingand features low gate charge while maintaining low on- rDS(ON) = 0.010 (Typ), VGS = 10Vresistance. rDS(ON) = 0.017 (Typ), VGS = 5VOptimized for switching applications, this device improvesthe overa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE609

 

 
Back to Top