All MOSFET. SWD30N06 Datasheet

 

SWD30N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWD30N06
   Marking Code: SW30N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO-252

 SWD30N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWD30N06 Datasheet (PDF)

 ..1. Size:400K  samwin
 sw30n06 swp40n10 swi40n10 swd30n06.pdf

SWD30N06 SWD30N06

SAMWIN SW30N06N-channel MOSFETTO-220 TO-251 TO-252FeaturesBVDSS : 60VID : 30A High ruggedness RDS(ON) (Max 0.036 )@VGS=10VRDS(ON) : 0.036 ohm Gate Charge (Typ 20nC)1 21 Improved dv/dt Capability 21 32 3 100% Avalanche Tested3 21. Gate 2. Drain 3. Source1General DescriptionThese N-channel enhancement mode power field effect transistors

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: PD506BA | 2SK1581

 

 
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