SWD30N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: SWD30N06
Marking Code: SW30N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO-252
SWD30N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWD30N06 Datasheet (PDF)
sw30n06 swp40n10 swi40n10 swd30n06.pdf
SAMWIN SW30N06N-channel MOSFETTO-220 TO-251 TO-252FeaturesBVDSS : 60VID : 30A High ruggedness RDS(ON) (Max 0.036 )@VGS=10VRDS(ON) : 0.036 ohm Gate Charge (Typ 20nC)1 21 Improved dv/dt Capability 21 32 3 100% Avalanche Tested3 21. Gate 2. Drain 3. Source1General DescriptionThese N-channel enhancement mode power field effect transistors
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100