All MOSFET. SWD30N06 Datasheet

 

SWD30N06 Datasheet and Replacement


   Type Designator: SWD30N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO-252
 

 SWD30N06 substitution

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SWD30N06 Datasheet (PDF)

 ..1. Size:400K  samwin
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SWD30N06

SAMWIN SW30N06N-channel MOSFETTO-220 TO-251 TO-252FeaturesBVDSS : 60VID : 30A High ruggedness RDS(ON) (Max 0.036 )@VGS=10VRDS(ON) : 0.036 ohm Gate Charge (Typ 20nC)1 21 Improved dv/dt Capability 21 32 3 100% Avalanche Tested3 21. Gate 2. Drain 3. Source1General DescriptionThese N-channel enhancement mode power field effect transistors

Datasheet: FTP540 , MT4953 , NDP06N60Z , NTMFS4C09N , RU7588R3 , SMP40N10 , SWP30N06 , SWI30N06 , IRF9540N , SWP630 , SWF630 , SWD630 , SW1N60A , SW1N60C , SW1N60D , SW1N60E , SW226N .

History: RUC002N05HZGT116 | AUIRF7316Q | ST3414A | 2SJ567 | IRF7752 | SWF16N65D | AP9972GI

Keywords - SWD30N06 MOSFET datasheet

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