SWD30N06 Datasheet and Replacement
Type Designator: SWD30N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO-252
SWD30N06 substitution
SWD30N06 Datasheet (PDF)
sw30n06 swp40n10 swi40n10 swd30n06.pdf

SAMWIN SW30N06N-channel MOSFETTO-220 TO-251 TO-252FeaturesBVDSS : 60VID : 30A High ruggedness RDS(ON) (Max 0.036 )@VGS=10VRDS(ON) : 0.036 ohm Gate Charge (Typ 20nC)1 21 Improved dv/dt Capability 21 32 3 100% Avalanche Tested3 21. Gate 2. Drain 3. Source1General DescriptionThese N-channel enhancement mode power field effect transistors
Datasheet: FTP540 , MT4953 , NDP06N60Z , NTMFS4C09N , RU7588R3 , SMP40N10 , SWP30N06 , SWI30N06 , K4145 , SWP630 , SWF630 , SWD630 , SW1N60A , SW1N60C , SW1N60D , SW1N60E , SW226N .
History: SFS12R08PNF | STL70N10F3 | NTHS4101PT1G | FDZ375P | 2SK538 | 2SK3541MGP
Keywords - SWD30N06 MOSFET datasheet
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History: SFS12R08PNF | STL70N10F3 | NTHS4101PT1G | FDZ375P | 2SK538 | 2SK3541MGP



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