SWF630 Specs and Replacement
Type Designator: SWF630
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220F
SWF630 substitution
- MOSFET ⓘ Cross-Reference Search
SWF630 datasheet
sw630 swp630 swf630 swd630.pdf
SAMWIN SW630 N-channel MOSFET TO-220F TO-220 TO-252 Features BVDSS 200V High ruggedness ID 10A RDS(ON) (Max 0.4 )@VGS=10V Gate Charge (Typ 20nC) RDS(ON) 0.4ohm 1 Improved dv/dt Capability 2 100% Avalanche Tested 1 1 3 2 2 3 3 2 1. Gate 2. Drain 3. Source General Description 1 This power MOSFET is produced with advanced VDMOS technology of SAMW... See More ⇒
Detailed specifications: NDP06N60Z, NTMFS4C09N, RU7588R3, SMP40N10, SWP30N06, SWI30N06, SWD30N06, SWP630, IRLB4132, SWD630, SW1N60A, SW1N60C, SW1N60D, SW1N60E, SW226N, SW226NV, SW2N10
Keywords - SWF630 MOSFET specs
SWF630 cross reference
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SWF630 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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