All MOSFET. SWF630 Datasheet

 

SWF630 Datasheet and Replacement


   Type Designator: SWF630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220F
 

 SWF630 substitution

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SWF630 Datasheet (PDF)

 ..1. Size:742K  samwin
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SWF630

SAMWIN SW630N-channel MOSFETTO-220F TO-220 TO-252FeaturesBVDSS : 200V High ruggednessID : 10A RDS(ON) (Max 0.4 )@VGS=10V Gate Charge (Typ 20nC)RDS(ON) : 0.4ohm1 Improved dv/dt Capability 2 100% Avalanche Tested1 132 23 321. Gate 2. Drain 3. SourceGeneral Description1This power MOSFET is produced with advanced VDMOS technology of SAMW

Datasheet: NDP06N60Z , NTMFS4C09N , RU7588R3 , SMP40N10 , SWP30N06 , SWI30N06 , SWD30N06 , SWP630 , IRLB4132 , SWD630 , SW1N60A , SW1N60C , SW1N60D , SW1N60E , SW226N , SW226NV , SW2N10 .

History: FDT3612 | 2N80L-TF2-T | APM9988QB | BRU24N50 | NTJS3157NT2 | 4N70KG-TM3-T | SVSP7N70DD2TR

Keywords - SWF630 MOSFET datasheet

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