SW226N MOSFET. Datasheet pdf. Equivalent
Type Designator: SW226N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO-251 TO-252
SW226N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SW226N Datasheet (PDF)
sw226n.pdf
SW226NSAMWINN-channel MOSFETTO-251 TO-252BVDSS : 600VFeaturesID : 4.0A High ruggednessRDS(ON) : 2.3ohm RDS(ON) (Max 2.3 )@VGS=10V1 2 Gate Charge (Typical 30nC)123 Improved dv/dt Capability 32 100% Avalanche Tested1. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
sw226nv.pdf
SW226NVSW226NVSAMWINN-channel MOSFETBVDSS : 600VIPAKDPAKFeaturesID : 4.0A High ruggednessRDS(ON) : 2.5ohm RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typical 34nC)21 Improved dv/dt Capability 22 13 3 100% Avalanche Tested1. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAM
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
