SW226N MOSFET Datasheet: N-Ch, 600V, 4A. Full specification with pinout and replacement list

SW226N Specs and Replacement

   Type Designator: SW226N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO-251 TO-252

SW226N substitution

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SW226N datasheet

..1. Size:479K samwin
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SW226N SAMWIN N-channel MOSFET TO-251 TO-252 BVDSS 600V Features ID 4.0A High ruggedness RDS(ON) 2.3ohm RDS(ON) (Max 2.3 )@VGS=10V 1 2 Gate Charge (Typical 30nC) 1 2 3 Improved dv/dt Capability 3 2 100% Avalanche Tested 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. ... See More ⇒

0.1. Size:833K samwin
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SW226NV SW226NV SAMWIN N-channel MOSFET BVDSS 600V IPAK DPAK Features ID 4.0A High ruggedness RDS(ON) 2.5ohm RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typical 34nC) 2 1 Improved dv/dt Capability 2 2 1 3 3 100% Avalanche Tested 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAM... See More ⇒

Detailed specifications: SWD30N06 , SWP630 , SWF630 , SWD630 , SW1N60A , SW1N60C , SW1N60D , SW1N60E , SKD502T , SW226NV , SW2N10 , SW2N60 , SW2N60A1 , SW2N60B , SW2N60D , SW2N65 , SW2N65B .