All MOSFET. SW2N10 Datasheet

 

SW2N10 Datasheet and Replacement


   Type Designator: SW2N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: SOT-23
 

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SW2N10 Datasheet (PDF)

 ..1. Size:430K  samwin
 sw2n10.pdf pdf_icon

SW2N10

SAMWIN SW2N10 N-channel SOT-23 MOSFET SOT-23 Features BVDSS : 100V 3 ID : 2A High ruggedness RDS(ON) (Max0.24)@VGS=10V RDS(ON) :0.24 Gate Charge (Typical 13nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 2 1. Gate 2. Source 3. Drain 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

 9.1. Size:561K  huashuo
 hsw2n15.pdf pdf_icon

SW2N10

HSW2N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary V 150 V DSThe HSW2N15 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 380 m DS(ON),typgate charge for most of the synchronous buck converter applications. I 1.4 A DThe HSW2N15 meet the RoHS and Green Product requirement with full function reliability approved.

Datasheet: SWF630 , SWD630 , SW1N60A , SW1N60C , SW1N60D , SW1N60E , SW226N , SW226NV , TK10A60D , SW2N60 , SW2N60A1 , SW2N60B , SW2N60D , SW2N65 , SW2N65B , SW2N70 , SW3N10 .

History: 18N10W | WMJ26N65C4 | IXCY01N90E | SM8007NSU | IXFP26N30X3 | UT7317 | IRFP344PBF

Keywords - SW2N10 MOSFET datasheet

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