SW2N10 Specs and Replacement
Type Designator: SW2N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: SOT-23
SW2N10 substitution
- MOSFET ⓘ Cross-Reference Search
SW2N10 datasheet
sw2n10.pdf
SAMWIN SW2N10 N-channel SOT-23 MOSFET SOT-23 Features BVDSS 100V 3 ID 2A High ruggedness RDS(ON) (Max0.24 )@VGS=10V RDS(ON) 0.24 Gate Charge (Typical 13nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 2 1. Gate 2. Source 3. Drain 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. ... See More ⇒
hsw2n15.pdf
HSW2N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary V 150 V DS The HSW2N15 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and R 380 m DS(ON),typ gate charge for most of the synchronous buck converter applications. I 1.4 A D The HSW2N15 meet the RoHS and Green Product requirement with full function reliability approved. ... See More ⇒
Detailed specifications: SWF630, SWD630, SW1N60A, SW1N60C, SW1N60D, SW1N60E, SW226N, SW226NV, 13N50, SW2N60, SW2N60A1, SW2N60B, SW2N60D, SW2N65, SW2N65B, SW2N70, SW3N10
Keywords - SW2N10 MOSFET specs
SW2N10 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FTP18N06N | AP4800GYT-HF | FHU7N65B | 2SK2144 | BXL4001 | SVT078R0ND | NCEP60T12A
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