SW2N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: SW2N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: SOT-23
SW2N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SW2N10 Datasheet (PDF)
sw2n10.pdf
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SAMWIN SW2N10 N-channel SOT-23 MOSFET SOT-23 Features BVDSS : 100V 3 ID : 2A High ruggedness RDS(ON) (Max0.24)@VGS=10V RDS(ON) :0.24 Gate Charge (Typical 13nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 2 1. Gate 2. Source 3. Drain 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
hsw2n15.pdf
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HSW2N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary V 150 V DSThe HSW2N15 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 380 m DS(ON),typgate charge for most of the synchronous buck converter applications. I 1.4 A DThe HSW2N15 meet the RoHS and Green Product requirement with full function reliability approved.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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