SAMWIN SW2N10 N-channel SOT-23 MOSFET SOT-23 Features BVDSS : 100V 3 ID : 2A High ruggedness RDS(ON) (Max0.24)@VGS=10V RDS(ON) :0.24 Gate Charge (Typical 13nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 2 1. Gate 2. Source 3. Drain 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

HSW2N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary V 150 V DSThe HSW2N15 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 380 m DS(ON),typgate charge for most of the synchronous buck converter applications. I 1.4 A DThe HSW2N15 meet the RoHS and Green Product requirement with full function reliability approved.