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SW2N70 Specs and Replacement

Type Designator: SW2N70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm

Package: TO-251 TO-252

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SW2N70 datasheet

 ..1. Size:418K  samwin
 sw2n70.pdf pdf_icon

SW2N70

SAMWIN SW2N70 N-channel MOSFET TO-251 TO-252 BVDSS 700V Features ID 2A High ruggedness RDS(ON) 7ohm RDS(ON) (Max 7 )@VGS=10V 2 Gate Charge (Typical 11nC) 1 1 Improved dv/dt Capability 2 3 2 3 100% Avalanche Tested 1. Gate 2. Drain 3. Source 1 3 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This te... See More ⇒

Detailed specifications: SW226NV, SW2N10, SW2N60, SW2N60A1, SW2N60B, SW2N60D, SW2N65, SW2N65B, IRF530, SW3N10, SW3N80C, SW4N60, SW4N60A, SW4N60B, SW4N60D, SW4N60K, SW4N60V

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