All MOSFET. SW2N70 Datasheet

 

SW2N70 Datasheet and Replacement


   Type Designator: SW2N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: TO-251 TO-252
 

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SW2N70 Datasheet (PDF)

 ..1. Size:418K  samwin
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SW2N70

SAMWIN SW2N70N-channel MOSFETTO-251 TO-252BVDSS : 700VFeaturesID : 2A High ruggednessRDS(ON) : 7ohm RDS(ON) (Max 7 )@VGS=10V2 Gate Charge (Typical 11nC)11 Improved dv/dt Capability 2 323 100% Avalanche Tested1. Gate 2. Drain 3. Source13General DescriptionThis power MOSFET is produced with advanced VDMOS technology of SAMWIN.This te

Datasheet: SW226NV , SW2N10 , SW2N60 , SW2N60A1 , SW2N60B , SW2N60D , SW2N65 , SW2N65B , AO4407 , SW3N10 , SW3N80C , SW4N60 , SW4N60A , SW4N60B , SW4N60D , SW4N60K , SW4N60V .

History: NCEP25ND10AG | STB14NK50Z | IRLR7821C | SM1A23NSU | SST109 | IPD65R1K0CE | IRF6674TRPBF

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