All MOSFET. SW3N10 Datasheet

 

SW3N10 Datasheet and Replacement


   Type Designator: SW3N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.107 Ohm
   Package: TO-252
 

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SW3N10 Datasheet (PDF)

 ..1. Size:509K  samwin
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SW3N10

SAMWIN SW3N10 N-channel D-PAK MOSFET TO-252 BVDSS : 100V Features ID : 3A High ruggedness RDS(ON) : 107m RDS(ON) (Max 107m)@VGS=10V Gate Charge (Typical 21nC) Improved dv/dt Capability 2 2 100% Avalanche Tested 1 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

Datasheet: SW2N10 , SW2N60 , SW2N60A1 , SW2N60B , SW2N60D , SW2N65 , SW2N65B , SW2N70 , IRLB4132 , SW3N80C , SW4N60 , SW4N60A , SW4N60B , SW4N60D , SW4N60K , SW4N60V , SW4N65B .

History: NCEP026N10T | BUZ103SL

Keywords - SW3N10 MOSFET datasheet

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