SW3N10 PDF and Equivalents Search

 

SW3N10 Specs and Replacement

Type Designator: SW3N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.107 Ohm

Package: TO-252

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SW3N10 datasheet

 ..1. Size:509K  samwin
 sw3n10.pdf pdf_icon

SW3N10

SAMWIN SW3N10 N-channel D-PAK MOSFET TO-252 BVDSS 100V Features ID 3A High ruggedness RDS(ON) 107m RDS(ON) (Max 107m )@VGS=10V Gate Charge (Typical 21nC) Improved dv/dt Capability 2 2 100% Avalanche Tested 1 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. ... See More ⇒

Detailed specifications: SW2N10, SW2N60, SW2N60A1, SW2N60B, SW2N60D, SW2N65, SW2N65B, SW2N70, CS150N03A8, SW3N80C, SW4N60, SW4N60A, SW4N60B, SW4N60D, SW4N60K, SW4N60V, SW4N65B

Keywords - SW3N10 MOSFET specs

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