SW3N80C Datasheet and Replacement
Type Designator: SW3N80C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
Package: TO-251 TO-252
SW3N80C substitution
SW3N80C Datasheet (PDF)
sw3n80c.pdf
SAMWINSW3N80CSW3N80CN-channel MOSFETTO-220F IPAK DPAKBVDSS : 800VFeaturesID : 3.0A High ruggednessRDS(ON) : 4.9ohm RDS(ON) (Max 4.9 )@VGS=10V Gate Charge (Typ 12nC)2 Improved dv/dt Capability 111 3 2 100% Avalanche Tested 23 231. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technol
Datasheet: SW2N60 , SW2N60A1 , SW2N60B , SW2N60D , SW2N65 , SW2N65B , SW2N70 , SW3N10 , IRFP450 , SW4N60 , SW4N60A , SW4N60B , SW4N60D , SW4N60K , SW4N60V , SW4N65B , SW4N65D .
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History: 3N60F | SI7448DP
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