SW3N80C PDF and Equivalents Search

 

SW3N80C Specs and Replacement

Type Designator: SW3N80C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm

Package: TO-251 TO-252

SW3N80C substitution

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SW3N80C datasheet

 ..1. Size:841K  samwin
 sw3n80c.pdf pdf_icon

SW3N80C

SAMWIN SW3N80C SW3N80C N-channel MOSFET TO-220F IPAK DPAK BVDSS 800V Features ID 3.0A High ruggedness RDS(ON) 4.9ohm RDS(ON) (Max 4.9 )@VGS=10V Gate Charge (Typ 12nC) 2 Improved dv/dt Capability 1 1 1 3 2 100% Avalanche Tested 2 3 2 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technol... See More ⇒

 8.1. Size:228K  1
 ssi3n80a ssw3n80a.pdf pdf_icon

SW3N80C

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Detailed specifications: SW2N60, SW2N60A1, SW2N60B, SW2N60D, SW2N65, SW2N65B, SW2N70, SW3N10, NCEP15T14, SW4N60, SW4N60A, SW4N60B, SW4N60D, SW4N60K, SW4N60V, SW4N65B, SW4N65D

Keywords - SW3N80C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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