All MOSFET. SW3N80C Datasheet

 

SW3N80C MOSFET. Datasheet pdf. Equivalent


   Type Designator: SW3N80C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.5 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
   Package: TO-251 TO-252

 SW3N80C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SW3N80C Datasheet (PDF)

 ..1. Size:841K  samwin
 sw3n80c.pdf

SW3N80C SW3N80C

SAMWINSW3N80CSW3N80CN-channel MOSFETTO-220F IPAK DPAKBVDSS : 800VFeaturesID : 3.0A High ruggednessRDS(ON) : 4.9ohm RDS(ON) (Max 4.9 )@VGS=10V Gate Charge (Typ 12nC)2 Improved dv/dt Capability 111 3 2 100% Avalanche Tested 23 231. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technol

 8.1. Size:228K  1
 ssi3n80a ssw3n80a.pdf

SW3N80C SW3N80C

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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