All MOSFET. RFG75N05E Datasheet

 

RFG75N05E Datasheet and Replacement


   Type Designator: RFG75N05E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 75 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO247
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RFG75N05E Datasheet (PDF)

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RFG75N05E

RFG75N05EData Sheet July 1999 File Number 2275.575A, 50V, 0.008 Ohm, N-Channel Power FeaturesMOSFET 75A, 50VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.008power field effect transistors. They are advanced power Electrostatic Discharge RatedMOSFETs designed, tested, and guaranteed to withstand a UIS Rating Curve (Single Pulse)specified level

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

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