All MOSFET. RFG75N05E Datasheet

 

RFG75N05E MOSFET. Datasheet pdf. Equivalent


   Type Designator: RFG75N05E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 400(max) nC
   trⓘ - Rise Time: 75 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO247

 RFG75N05E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFG75N05E Datasheet (PDF)

 ..1. Size:61K  intersil
 rfg75n05e.pdf

RFG75N05E RFG75N05E

RFG75N05EData Sheet July 1999 File Number 2275.575A, 50V, 0.008 Ohm, N-Channel Power FeaturesMOSFET 75A, 50VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.008power field effect transistors. They are advanced power Electrostatic Discharge RatedMOSFETs designed, tested, and guaranteed to withstand a UIS Rating Curve (Single Pulse)specified level

Datasheet: RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 , RFG60P05E , RFG60P06E , RFG70N06 , AO4407 , RFL1N10L , RFP10P03L , RFP12N06RLE , RFP12N10L , RFP12P08 , RFP12P10 , RFP14N05 , RFP14N05L .

 

 
Back to Top