RFG75N05E Specs and Replacement

Type Designator: RFG75N05E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO247

RFG75N05E substitution

- MOSFET ⓘ Cross-Reference Search

 

RFG75N05E datasheet

 ..1. Size:61K  intersil
 rfg75n05e.pdf pdf_icon

RFG75N05E

RFG75N05E Data Sheet July 1999 File Number 2275.5 75A, 50V, 0.008 Ohm, N-Channel Power Features MOSFET 75A, 50V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.008 power field effect transistors. They are advanced power Electrostatic Discharge Rated MOSFETs designed, tested, and guaranteed to withstand a UIS Rating Curve (Single Pulse) specified level... See More ⇒

Detailed specifications: RFG45N06LE, RFG50N05L, RFG50N06, RFG50N06LE, RFG60P03, RFG60P05E, RFG60P06E, RFG70N06, AO3401, RFL1N10L, RFP10P03L, RFP12N06RLE, RFP12N10L, RFP12P08, RFP12P10, RFP14N05, RFP14N05L

Keywords - RFG75N05E MOSFET specs

 RFG75N05E cross reference

 RFG75N05E equivalent finder

 RFG75N05E pdf lookup

 RFG75N05E substitution

 RFG75N05E replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.