SW4N80B Datasheet and Replacement

SAMWIN SW4N80B N-channel TO-220F MOSFET Features TO-220F TO-251N BVDSS : 800V ID : 4A High ruggedness RDS(ON) (Max 4)@VGS=10V RDS(ON) : 4ohm Gate Charge (Typical 14nC) 1 1 Improved dv/dt Capability 2 2 100% Avalanche Tested 2 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technol

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V2 Low RDS(ON) : 3.400 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V2 Low RDS(ON) : 2.450 (Typ.)c112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha