SW4N80B MOSFET Datasheet: N-Ch, 800V, 4A. Full specification with pinout and replacement list

SW4N80B Specs and Replacement

Type Designator: SW4N80B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 252.13 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO-251N

SW4N80B substitution

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SW4N80B datasheet

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SAMWIN SW4N80B N-channel TO-220F MOSFET Features TO-220F TO-251N BVDSS 800V ID 4A High ruggedness RDS(ON) (Max 4 )@VGS=10V RDS(ON) 4ohm Gate Charge (Typical 14nC) 1 1 Improved dv/dt Capability 2 2 100% Avalanche Tested 2 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technol... See More ⇒

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Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V 2 Low RDS(ON) 3.400 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact... See More ⇒