All MOSFET. SW601Q Datasheet

 

SW601Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: SW601Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1300 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 330 Ohm
   Package: SOT-23

 SW601Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SW601Q Datasheet (PDF)

 ..1. Size:424K  samwin
 sw601q.pdf

SW601Q SW601Q

SAMWIN SW601Q N-channel SOT-23 MOSFET BVDSS : 600V SOT-23 3 Features ID : 0.185A RDS(ON) : 700 RDS(ON) (Max 700)@VGS=0V,ID=3mA High Switching Speed 1 3 2 2 1. Source 2. Gate 3. Drain 1 General Description The SW601Q is an N-channel power MOSFET using SAMWINs Advanced technology to provide the customers with high switching speed. Order Cod

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPA60R600P7 | PA102FMA | VBE2305

 

 
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