All MOSFET. SW601Q Datasheet

 

SW601Q Datasheet and Replacement


   Type Designator: SW601Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 330 Ohm
   Package: SOT-23
 

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SW601Q Datasheet (PDF)

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SW601Q

SAMWIN SW601Q N-channel SOT-23 MOSFET BVDSS : 600V SOT-23 3 Features ID : 0.185A RDS(ON) : 700 RDS(ON) (Max 700)@VGS=0V,ID=3mA High Switching Speed 1 3 2 2 1. Source 2. Gate 3. Drain 1 General Description The SW601Q is an N-channel power MOSFET using SAMWINs Advanced technology to provide the customers with high switching speed. Order Cod

Datasheet: SW4N60V , SW4N65B , SW4N65D , SW4N65K , SW4N65U , SW4N70B , SW4N70K , SW4N80B , IRFZ46N , U55NF06 , UC1764 , UJN1205K , UJN1208K , UM6J1N , UM6K33N , UM6K34N , UPA1716 .

History: IPSA70R2K0CE | IRFSL59N10DPBF

Keywords - SW601Q MOSFET datasheet

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