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SW601Q Specs and Replacement

Type Designator: SW601Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 330 Ohm

Package: SOT-23

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SW601Q datasheet

 ..1. Size:424K  samwin
 sw601q.pdf pdf_icon

SW601Q

SAMWIN SW601Q N-channel SOT-23 MOSFET BVDSS 600V SOT-23 3 Features ID 0.185A RDS(ON) 700 RDS(ON) (Max 700 )@VGS=0V,ID=3mA High Switching Speed 1 3 2 2 1. Source 2. Gate 3. Drain 1 General Description The SW601Q is an N-channel power MOSFET using SAMWIN s Advanced technology to provide the customers with high switching speed. Order Cod... See More ⇒

Detailed specifications: SW4N60V, SW4N65B, SW4N65D, SW4N65K, SW4N65U, SW4N70B, SW4N70K, SW4N80B, SI2302, U55NF06, UC1764, UJN1205K, UJN1208K, UM6J1N, UM6K33N, UM6K34N, UPA1716

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