All MOSFET. U55NF06 Datasheet

 

U55NF06 Datasheet and Replacement


   Type Designator: U55NF06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-252
 

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U55NF06 Datasheet (PDF)

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U55NF06

55NF06Pb55NF06Pb Free Plating ProductN-CHANNEL POWER MOSFET TRANSISTOR50 AMPERE 60 VOLTN-CHANNEL POWER MOSFET12TO-251/IPAK3 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max 12threshold voltages of 4 volt. TO-

Datasheet: SW4N65B , SW4N65D , SW4N65K , SW4N65U , SW4N70B , SW4N70K , SW4N80B , SW601Q , 7N60 , UC1764 , UJN1205K , UJN1208K , UM6J1N , UM6K33N , UM6K34N , UPA1716 , UPA1716G .

History: S10H06R | OSG70R900DTF | SL21N65CK | APM4828KC-TRL | 2SK1825 | FTK4N60D | AP92U03GS-HF

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