U55NF06 PDF and Equivalents Search

 

U55NF06 Specs and Replacement

Type Designator: U55NF06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO-252

U55NF06 substitution

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U55NF06 datasheet

 ..1. Size:279K  thinkisemi
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U55NF06

55NF06 Pb 55NF06 Pb Free Plating Product N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET 1 2 TO-251/IPAK 3 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max 12 threshold voltages of 4 volt. TO-... See More ⇒

Detailed specifications: SW4N65B, SW4N65D, SW4N65K, SW4N65U, SW4N70B, SW4N70K, SW4N80B, SW601Q, AO3407, UC1764, UJN1205K, UJN1208K, UM6J1N, UM6K33N, UM6K34N, UPA1716, UPA1716G

Keywords - U55NF06 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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