RFL1N10L MOSFET. Datasheet pdf. Equivalent

   Type Designator: RFL1N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 8.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 80(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO205AF

RFL1N10L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFL1N10L Datasheet (PDF)

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rfl1n10l.pdf

RFL1N10L1A, 100V, 1.200 Ohm, Logic Level, N-ChannelSeptember 1998 Power MOSFETFeatures Description 1A, 100V This is an N-Channel enhancement mode silicon gate powerfield effect transistor specifically designed for use with logic rDS(ON) = 1.200level (5V) driving sources in applications such as program-mable controllers, automotive switching, and solenoid driv-ers. Thi

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