RFL1N10L PDF and Equivalents Search

 

RFL1N10L Specs and Replacement


   Type Designator: RFL1N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 8.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 80(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO205AF
 

 RFL1N10L substitution

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RFL1N10L datasheet

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RFL1N10L

RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel September 1998 Power MOSFET Features Description 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic rDS(ON) = 1.200 level (5V) driving sources in applications such as program- mable controllers, automotive switching, and solenoid driv- ers. Thi... See More ⇒

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RFL1N10L

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RFL1N10L

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RFL1N10L

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Detailed specifications: RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 , RFG60P05E , RFG60P06E , RFG70N06 , RFG75N05E , K3569 , RFP10P03L , RFP12N06RLE , RFP12N10L , RFP12P08 , RFP12P10 , RFP14N05 , RFP14N05L , RFP14N06 .

History: FDC3612

Keywords - RFL1N10L MOSFET specs

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