RFL1N10L Datasheet and Replacement
Type Designator: RFL1N10L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 8.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 80(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO205AF
RFL1N10L Datasheet (PDF)
rfl1n10l.pdf

RFL1N10L1A, 100V, 1.200 Ohm, Logic Level, N-ChannelSeptember 1998 Power MOSFETFeatures Description 1A, 100V This is an N-Channel enhancement mode silicon gate powerfield effect transistor specifically designed for use with logic rDS(ON) = 1.200level (5V) driving sources in applications such as program-mable controllers, automotive switching, and solenoid driv-ers. Thi
Datasheet: RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 , RFG60P05E , RFG60P06E , RFG70N06 , RFG75N05E , SPP20N60C3 , RFP10P03L , RFP12N06RLE , RFP12N10L , RFP12P08 , RFP12P10 , RFP14N05 , RFP14N05L , RFP14N06 .
History: STI22NM60N
Keywords - RFL1N10L MOSFET datasheet
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History: STI22NM60N



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