RFP10P03L Datasheet and Replacement
Type Designator: RFP10P03L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO220AB
RFP10P03L substitution
RFP10P03L Datasheet (PDF)
rfd10p03l-sm rfp10p03l.pdf
RFD10P03L, RFD10P03LSM,S E M I C O N D U C T O RRFP10P03L10A, 30V, 0.200, Logic LevelP-Channel Power MOSFETMay 1997Features Description 10A, 30V These products are P-Channel power MOSFETs manufac-tured using the MegaFET process. This process, which uses rDS(ON) = 0.200feature sizes approaching those of LSI circuits, gives opti-mum utilization of silicon, result
Datasheet: RFG50N06 , RFG50N06LE , RFG60P03 , RFG60P05E , RFG60P06E , RFG70N06 , RFG75N05E , RFL1N10L , 8205A , RFP12N06RLE , RFP12N10L , RFP12P08 , RFP12P10 , RFP14N05 , RFP14N05L , RFP14N06 , RFP14N06L .
History: FDFMA2P853T | AOT2606L
Keywords - RFP10P03L MOSFET datasheet
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History: FDFMA2P853T | AOT2606L
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