RFP10P03L Datasheet and Replacement
Type Designator: RFP10P03L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 340 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO220AB
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RFP10P03L Datasheet (PDF)
rfd10p03l-sm rfp10p03l.pdf
RFD10P03L, RFD10P03LSM,S E M I C O N D U C T O RRFP10P03L10A, 30V, 0.200, Logic LevelP-Channel Power MOSFETMay 1997Features Description 10A, 30V These products are P-Channel power MOSFETs manufac-tured using the MegaFET process. This process, which uses rDS(ON) = 0.200feature sizes approaching those of LSI circuits, gives opti-mum utilization of silicon, result
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: ZXMN4A06GT | HLML6401 | NTMFS4C06N | STS8201 | DMN53D0LT | SWH160R02VT | AP85T03GH-HF
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History: ZXMN4A06GT | HLML6401 | NTMFS4C06N | STS8201 | DMN53D0LT | SWH160R02VT | AP85T03GH-HF
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