All MOSFET. PTP04N04N Datasheet

 

PTP04N04N Datasheet and Replacement


   Type Designator: PTP04N04N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 206 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO220
 

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PTP04N04N Datasheet (PDF)

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PTP04N04N

PTP04N04N 40V N-Channel Trench MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 40V 3.0m 206A RDS(ON),typ.=3.0m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters DC-AC Inverters G Power Supply D S TO-220 Ordering Information Package No to Scale Part Number Packag

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PTP04N04N

PTP04N04A 40V N-Channel Planar MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 40V 4.0m 206A RDS(ON),typ.=4.0m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters DC-AC Inverters G Power Supply D S TO-220 Ordering Information Part Number Package Brand Package No to

Datasheet: UPA2593T1H , UPA2650T1E , UPA2670T1R , UPA2672T1R , UPA2680T1E , UPA2700GR , STQ1NC45 , RU7088R3 , IRF3205 , OSG55R190AF , OSG55R190DF , OSG55R190FF , OSG55R190PF , MDU2657 , JCS4N60V , JCS4N60R , JCS4N60S .

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