All MOSFET. PTP04N04N Datasheet

 

PTP04N04N MOSFET. Datasheet pdf. Equivalent

Type Designator: PTP04N04N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 206 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 50.8 nC

Rise Time (tr): 59 nS

Drain-Source Capacitance (Cd): 430 pF

Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm

Package: TO220

PTP04N04N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PTP04N04N Datasheet (PDF)

1.1. ptp04n04n.pdf Size:865K _update-mosfet

PTP04N04N
PTP04N04N

PTP04N04N 40V N-Channel Trench MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 40V 3.0mΩ 206A RDS(ON),typ.=3.0m Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters DC-AC Inverters G Power Supply D S TO-220 Ordering Information Package No to Scale Part Number Packag

Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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