All MOSFET. UPA3753GR Datasheet

 

UPA3753GR MOSFET. Datasheet pdf. Equivalent


   Type Designator: UPA3753GR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.4 nC
   trⓘ - Rise Time: 3.7 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: SOP-8

 UPA3753GR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UPA3753GR Datasheet (PDF)

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 upa3753gr.pdf

UPA3753GR UPA3753GR

Data SheetPA3753GR R07DS0758EJ0100Rev.1.00May 25, 2012MOS FIELD EFFECT TRANSISTOR Description The PA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application. Features Dual chip type Low on-state resistance RDS(on) = 56 m MAX. (VGS = 10 V, ID = 2.5 A) RDS(on) = 72 m MAX. (VGS = 4.5 V, ID = 2.5 A) Low gate charg

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