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US5U29TR Spec and Replacement


   Type Designator: US5U29TR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: TSMT5

 US5U29TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

US5U29TR Specs

 ..1. Size:72K  rohm
 us5u29tr.pdf pdf_icon

US5U29TR

US5U29 Transistor Small switching ( 20V, 1.5A) US5U29 Features External dimensions (Unit mm) 1) The US5U29 conbines Pch MOSFET with a (4) (3) (2) Schottky barrier diode in a single TSMT5 package. (5) (1) 2) Pch MOSFET have a low on-state resistance with a fast switching. 0.2 1.7 0.2 2.1 3) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The Independently con... See More ⇒

 9.1. Size:67K  rohm
 us5u2.pdf pdf_icon

US5U29TR

US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. 4) Built-in Low VF schottky barrier diode. Abbreviated symbol U02 Applications Swi... See More ⇒

Detailed specifications: UPA602CT , UPA603CT , UPA621TT , UPA622TT , UPA650TT , UPA651TT , US5U1 , US5U2 , IRF640 , US5U3 , US5U30 , US5U35 , US5U38 , US6J11 , US6K1 , US6K2 , US6K4 .

Keywords - US5U29TR MOSFET specs

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