All MOSFET. US5U29TR Datasheet

 

US5U29TR Datasheet and Replacement


   Type Designator: US5U29TR
   Marking Code: U29
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.1 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: TSMT5
 

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US5U29TR Datasheet (PDF)

 ..1. Size:72K  rohm
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US5U29TR

US5U29 Transistor Small switching (20V, 1.5A) US5U29 Features External dimensions (Unit : mm) 1) The US5U29 conbines Pch MOSFET with a (4) (3)(2)Schottky barrier diode in a single TSMT5 package. (5) (1)2) Pch MOSFET have a low on-state resistance with a fast switching. 0.2 1.7 0.22.13) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The Independently con

 9.1. Size:67K  rohm
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US5U29TR

US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5Schottky barrier diode 2.01.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U02 ApplicationsSwi

Datasheet: UPA602CT , UPA603CT , UPA621TT , UPA622TT , UPA650TT , UPA651TT , US5U1 , US5U2 , IRFP460 , US5U3 , US5U30 , US5U35 , US5U38 , US6J11 , US6K1 , US6K2 , US6K4 .

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