US5U29TR Datasheet. Specs and Replacement

Type Designator: US5U29TR  📄📄 

Marking Code: U29

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2 V

Qg ⓘ - Total Gate Charge: 2.1 nC

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm

Package: TSMT5

  📄📄 Copy 

US5U29TR substitution

- MOSFET ⓘ Cross-Reference Search

 

US5U29TR datasheet

 ..1. Size:72K  rohm
 us5u29tr.pdf pdf_icon

US5U29TR

US5U29 Transistor Small switching ( 20V, 1.5A) US5U29 Features External dimensions (Unit mm) 1) The US5U29 conbines Pch MOSFET with a (4) (3) (2) Schottky barrier diode in a single TSMT5 package. (5) (1) 2) Pch MOSFET have a low on-state resistance with a fast switching. 0.2 1.7 0.2 2.1 3) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The Independently con... See More ⇒

 9.1. Size:67K  rohm
 us5u2.pdf pdf_icon

US5U29TR

US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. 4) Built-in Low VF schottky barrier diode. Abbreviated symbol U02 Applications Swi... See More ⇒

Detailed specifications: UPA602CT, UPA603CT, UPA621TT, UPA622TT, UPA650TT, UPA651TT, US5U1, US5U2, IRFP460, US5U3, US5U30, US5U35, US5U38, US6J11, US6K1, US6K2, US6K4

Keywords - US5U29TR MOSFET specs

 US5U29TR cross reference

 US5U29TR equivalent finder

 US5U29TR pdf lookup

 US5U29TR substitution

 US5U29TR replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility