US6K1 Specs and Replacement
Type Designator: US6K1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TUMT6
US6K1 substitution
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US6K1 datasheet
us6k1.pdf
2.5V Drive Nch+Nch MOSFET US6K1 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol K01 Applications Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TR Basic ordering unit... See More ⇒
Detailed specifications: US5U1 , US5U2 , US5U29TR , US5U3 , US5U30 , US5U35 , US5U38 , US6J11 , AO3400 , US6K2 , US6K4 , US6M1 , US6M11 , US6M2 , US6U37 , AM4437P , AON6718L .
Keywords - US6K1 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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