US6K1 Datasheet and Replacement
Type Designator: US6K1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TUMT6
US6K1 substitution
US6K1 Datasheet (PDF)
us6k1.pdf

2.5V Drive Nch+Nch MOSFET US6K1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space savingsmall surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : K01 ApplicationsSwitching Packaging specifications Inner circuit Package Taping (6) (5) (4)Type Code TRBasic ordering unit
Datasheet: US5U1 , US5U2 , US5U29TR , US5U3 , US5U30 , US5U35 , US5U38 , US6J11 , IRF3710 , US6K2 , US6K4 , US6M1 , US6M11 , US6M2 , US6U37 , AM4437P , AON6718L .
History: AOT2142L | IGT60R070D1
Keywords - US6K1 MOSFET datasheet
US6K1 cross reference
US6K1 equivalent finder
US6K1 lookup
US6K1 substitution
US6K1 replacement
History: AOT2142L | IGT60R070D1



LIST
Last Update
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
ksa992 pinout | 2n1308 transistor | p609 | bc327-40 | tip125 | a992 transistor | 2sa913 | 2sc711 datasheet