All MOSFET. US6K1 Datasheet

 

US6K1 MOSFET. Datasheet pdf. Equivalent

Type Designator: US6K1

Marking Code: K01

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 1.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 1.6 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 13 pF

Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm

Package: TUMT6

US6K1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

US6K1 Datasheet (PDF)

1.1. us6k1.pdf Size:121K _update-mosfet

US6K1
US6K1

2.5V Drive Nch+Nch MOSFET US6K1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space savingsmall surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : K01 Applications Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TR Basic ordering unit

1.2. us6k1.pdf Size:186K _rohm

US6K1
US6K1

2.5V Drive Nch+Nch MOSFET US6K1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving?small surface mount package (TUMT6). ? 3) Low voltage drive (2.5V drive). Abbreviated symbol : K01 Applications Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TR Basic ordering unit (pie

 

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