US6K4 MOSFET. Datasheet pdf. Equivalent
Type Designator: US6K4
Marking Code: K04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.7 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 1.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 1.8 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 18 pF
Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
Package: TUMT6
US6K4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
US6K4 Datasheet (PDF)
1.1. us6k4.pdf 
Size:68K _update-mosfet
US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04 Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic o
1.2. us6k4.pdf Size:92K _rohm
US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04 Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic orde
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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