US6K4 Specs and Replacement
Type Designator: US6K4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 18 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TUMT6
US6K4 substitution
US6K4 datasheet
us6k4.pdf
US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol K04 Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic o... See More ⇒
Detailed specifications: US5U29TR , US5U3 , US5U30 , US5U35 , US5U38 , US6J11 , US6K1 , US6K2 , IRF3710 , US6M1 , US6M11 , US6M2 , US6U37 , AM4437P , AON6718L , APM3009NF , APM3009NG .
Keywords - US6K4 MOSFET specs
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