All MOSFET. US6K4 Datasheet

 

US6K4 Datasheet and Replacement


   Type Designator: US6K4
   Marking Code: K04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 1.8 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TUMT6
 

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US6K4 Datasheet (PDF)

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US6K4

US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04 ApplicationsSwitching Packaging specifications Inner circuit (6) (5) (4)Package TapingType Code TRBasic o

Datasheet: US5U29TR , US5U3 , US5U30 , US5U35 , US5U38 , US6J11 , US6K1 , US6K2 , P55NF06 , US6M1 , US6M11 , US6M2 , US6U37 , AM4437P , AON6718L , APM3009NF , APM3009NG .

History: 2SK3065T100

Keywords - US6K4 MOSFET datasheet

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