EKG1020 MOSFET. Datasheet pdf. Equivalent
Type Designator: EKG1020
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: TO-220
EKG1020 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
EKG1020 Datasheet (PDF)
ekg1020.pdf
100V, 20A Low RDS(ON) N ch Trench Power MOSFET EKG1020 / FKG1020 Features Package TO220 TO220F VDS ------------------------------------------------------ 100 V EKG1020 FKG1020 ID ---------------------------------------------------------- 20 A RDS(ON) --------------- 33 m typ.(VGS = 10 V, ID = 10 A) Built-in Gate protect diode 100 % UIL tested Ro
ekg1020.pdf
isc N-Channel MOSFET Transistor EKG1020FEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 52m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , SKD502T , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: MTA65N20H8 | SSF13N50F | STH8NA60FI | PP4B10AK | SI2323DS | G2309 | BUK436-200B
History: MTA65N20H8 | SSF13N50F | STH8NA60FI | PP4B10AK | SI2323DS | G2309 | BUK436-200B
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918