All MOSFET. EKG1020 Datasheet

 

EKG1020 Datasheet and Replacement


   Type Designator: EKG1020
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO-220
 

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EKG1020 Datasheet (PDF)

 ..1. Size:705K  sanken-ele
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EKG1020

100V, 20A Low RDS(ON) N ch Trench Power MOSFET EKG1020 / FKG1020 Features Package TO220 TO220F VDS ------------------------------------------------------ 100 V EKG1020 FKG1020 ID ---------------------------------------------------------- 20 A RDS(ON) --------------- 33 m typ.(VGS = 10 V, ID = 10 A) Built-in Gate protect diode 100 % UIL tested Ro

 ..2. Size:249K  inchange semiconductor
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EKG1020

isc N-Channel MOSFET Transistor EKG1020FEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 52m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: EFC6601R , EFC6602R , EFC6604R , EFC6605R , EFC6611R , EFC6611R-TF , EFC6612R , EFC6612R-TF , STF13NM60N , EKH06100 , EKI04027 , EKI04036 , EKI04047 , EKI06051 , EKI06075 , EKI06108 , EKI07076 .

History: AP4543GEH-HF | NCE60N1K0I

Keywords - EKG1020 MOSFET datasheet

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