EKG1020 Specs and Replacement

Type Designator: EKG1020

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: TO-220

EKG1020 substitution

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EKG1020 datasheet

 ..1. Size:705K  sanken-ele
 ekg1020.pdf pdf_icon

EKG1020

100V, 20A Low RDS(ON) N ch Trench Power MOSFET EKG1020 / FKG1020 Features Package TO220 TO220F VDS ------------------------------------------------------ 100 V EKG1020 FKG1020 ID ---------------------------------------------------------- 20 A RDS(ON) --------------- 33 m typ.(VGS = 10 V, ID = 10 A) Built-in Gate protect diode 100 % UIL tested Ro... See More ⇒

 ..2. Size:249K  inchange semiconductor
 ekg1020.pdf pdf_icon

EKG1020

isc N-Channel MOSFET Transistor EKG1020 FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒

Detailed specifications: EFC6601R, EFC6602R, EFC6604R, EFC6605R, EFC6611R, EFC6611R-TF, EFC6612R, EFC6612R-TF, IRFP250, EKH06100, EKI04027, EKI04036, EKI04047, EKI06051, EKI06075, EKI06108, EKI07076

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.