ELM14812AA Datasheet and Replacement
Type Designator: ELM14812AA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.1 nS
Cossⓘ - Output Capacitance: 102 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP-8
ELM14812AA substitution
ELM14812AA Datasheet (PDF)
elm14812aa.pdf

Dual N-channel MOSFETELM14812AA-NGeneral description Features ELM14812AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)
elm14822aa.pdf

Dual N-channel MOSFETELM14822AA-NGeneral description Features ELM14822AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=8.5A (Vgs=10V) Rds(on)
elm14806aa.pdf

Dual N-channel MOSFETELM14806AA-NGeneral description Features ELM14806AA-N uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=9.4A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)
elm14828aa.pdf

Dual N-channel MOSFETELM14828AA-NGeneral description Features ELM14828AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on) and low gate charge. Id=4.5A (Vgs=10V) Rds(on)
Datasheet: ELM14606AA , ELM14614AA , ELM14702AA-N , ELM14800AA , ELM14801AA , ELM14803AB , ELM14805AA , ELM14806AA , IRFB4115 , ELM14822AA , ELM14826AA , ELM14828AA , ELM16400EA , ELM16401EA , ELM16402EA , ELM16403EA , ELM16405EA .
History: AP70T15GP-HF | RRR040P03 | SSPL6022 | STS2301A | NVD5C668NL | LSGE04R035 | STB30NF10
Keywords - ELM14812AA MOSFET datasheet
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History: AP70T15GP-HF | RRR040P03 | SSPL6022 | STS2301A | NVD5C668NL | LSGE04R035 | STB30NF10



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