ELM14812AA MOSFET Datasheet: N-Ch, 30V, 6.9A. Full specification with pinout and replacement list

ELM14812AA Specs and Replacement

Type Designator: ELM14812AA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.1 nS

Cossⓘ - Output Capacitance: 102 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOP-8

ELM14812AA substitution

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ELM14812AA datasheet

..1. Size:392K elm
elm14812aa.pdf pdf_icon

Dual N-channel MOSFET ELM14812AA-N General description Features ELM14812AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on) ... See More ⇒

8.1. Size:389K elm
elm14822aa.pdf pdf_icon

Dual N-channel MOSFET ELM14822AA-N General description Features ELM14822AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=8.5A (Vgs=10V) Rds(on) ... See More ⇒

8.2. Size:395K elm
elm14806aa.pdf pdf_icon

Dual N-channel MOSFET ELM14806AA-N General description Features ELM14806AA-N uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=9.4A (Vgs=10V) operation with gate voltages as low as 1.8V and internal Rds(on) ... See More ⇒

8.3. Size:401K elm
elm14828aa.pdf pdf_icon

Dual N-channel MOSFET ELM14828AA-N General description Features ELM14828AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on) and low gate charge. Id=4.5A (Vgs=10V) Rds(on) ... See More ⇒