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DG840F Specs and Replacement


   Type Designator: DG840F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220FP
 

 DG840F substitution

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DG840F datasheet

 9.1. Size:739K  jiangsu
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DG840F

DG840 V1.0 N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG840 N ... See More ⇒

Detailed specifications: DG2N60-220F , DG2N60-126 , DG2N65-251 , DG2N65-252 , DG2N65-220 , DG2N65-220F , DG2N65-126 , DG840 , IRFP460 , DH100P30 , DH100P30F , DH100P30B , DH100P30D , DH100P30I , DH100P30E , F6B52HP , FP401 .

History: RD3P050SN | AGM16N10C | TK8P60W5 | AO4840 | IRFY120

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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