PHE95N03LT Specs and Replacement
Type Designator: PHE95N03LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 770 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: I2PAK
PHE95N03LT substitution
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PHE95N03LT datasheet
php95n03lt phb95n03lt phe95n03lt.pdf
PHP/PHB/PHE95N03LT TrenchMOS logic level FET Rev. 02 01 February 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP95N03LT in SOT78 (TO-220AB) PHB95N03LT in SOT404 (D2-PAK) PHE95N03LT in SOT226 (I2-PAK). 2. Features Low on-state resistance Fast switching. 3. App... See More ⇒
Detailed specifications: ISL9N310AD3, ISL9N310AD3ST, JCS7N60S, JCS7N60B, JCS7N60C, JCS7N60F, PHP95N03LT, PHB95N03LT, K3569, STP100N6F7, STP100NF04L, SVF10N65CFJ, STP10NB20, STP10NB20FP, STP10NB50, STP10NB50FP, STP10NC50
Keywords - PHE95N03LT MOSFET specs
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PHE95N03LT replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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