All MOSFET. ELM34413AA-N Datasheet

 

ELM34413AA-N Datasheet and Replacement


   Type Designator: ELM34413AA-N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.4 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8
 

 ELM34413AA-N substitution

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ELM34413AA-N Datasheet (PDF)

 ..1. Size:991K  elm
elm34413aa-n.pdf pdf_icon

ELM34413AA-N

Single P-channel MOSFETELM34413AA-NGeneral description Features ELM34413AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

 7.1. Size:613K  elm
elm34411aa.pdf pdf_icon

ELM34413AA-N

Single P-channel MOSFETELM34411AA-NGeneral description Features ELM34411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

 7.2. Size:561K  elm
elm34417aa.pdf pdf_icon

ELM34413AA-N

Single P-channel MOSFETELM34417AA-NGeneral description Features ELM34417AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on)

 7.3. Size:356K  elm
elm34414aa.pdf pdf_icon

ELM34413AA-N

Single N-channel MOSFETELM34414AA-NGeneral description Features ELM34414AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=15A resistance. Rds(on)

Datasheet: ELM34403AA-N , ELM34404AA , ELM34405AA , ELM34406AA-N , ELM34407AA , ELM34408AA , ELM34409AA , ELM34411AA , 13N50 , ELM34414AA , ELM34415AA , ELM34416AA , ELM34417AA , ELM34418AA , ELM34421AA , ELM34423AA , ELM34600AA .

History: SI1039X | SM4301PSU | SM6F24NSFP | HMS60N06D | AU7N60S | NP88N055KLE | UTT30N10

Keywords - ELM34413AA-N MOSFET datasheet

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