All MOSFET. RFW2N06RLE Datasheet

 

RFW2N06RLE Datasheet and Replacement


   Type Designator: RFW2N06RLE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.09 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: HEXDIP
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RFW2N06RLE Datasheet (PDF)

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RFW2N06RLE

RFW2N06RLEData Sheet July 1999 File Number 2838.32A, 60V, 0.160 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 2A, 60VThe RFW2N06RLE N-Channel, logic level, ESD protected, rDS(on) = 0.160power MOSFET is manufactured using the MegaFET UIS Rating Curve (Single Pulse)process. This process, which uses feature sizesapproaching those of LSI integrated circuits, gives

Datasheet: RFP8N20L , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , RFT2P03L , RFT3055LE , HY1906P , RLP1N06CLE , SD10425JAA , SDF034JAA-D , SDF034JAA-S , SDF034JAA-U , SDF034JAB-D , SDF034JAB-S , SDF034JAB-U .

History: AP9T18GEJ | HM3207

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