RFW2N06RLE Specs and Replacement

Type Designator: RFW2N06RLE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.09 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: HEXDIP

RFW2N06RLE substitution

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RFW2N06RLE datasheet

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RFW2N06RLE

RFW2N06RLE Data Sheet July 1999 File Number 2838.3 2A, 60V, 0.160 Ohm, Logic Level, Features N-Channel Power MOSFET 2A, 60V The RFW2N06RLE N-Channel, logic level, ESD protected, rDS(on) = 0.160 power MOSFET is manufactured using the MegaFET UIS Rating Curve (Single Pulse) process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives... See More ⇒

Detailed specifications: RFP8N20L, RFP8P05, RFP8P06E, RFP8P06LE, RFP8P10, RFT1P06E, RFT2P03L, RFT3055LE, IRFB7545, RLP1N06CLE, SD10425JAA, SDF034JAA-D, SDF034JAA-S, SDF034JAA-U, SDF034JAB-D, SDF034JAB-S, SDF034JAB-U

Keywords - RFW2N06RLE MOSFET specs

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