All MOSFET. ELM36405EA Datasheet

 

ELM36405EA Datasheet and Replacement


   Type Designator: ELM36405EA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: SOT-26
 

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ELM36405EA Datasheet (PDF)

 ..1. Size:481K  elm
 elm36405ea.pdf pdf_icon

ELM36405EA

Single P-channel MOSFETELM36405EA-SGeneral description Features ELM36405EA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-5A resistance. Rds(on)

 7.1. Size:587K  elm
 elm36403ea.pdf pdf_icon

ELM36405EA

Single P-channel MOSFETELM36403EA-SGeneral description Features ELM36403EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-5A resistance. Rds(on)

 7.2. Size:485K  elm
 elm36402ea.pdf pdf_icon

ELM36405EA

Single N-channel MOSFETELM36402EA-SGeneral description Features ELM36402EA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=6.5A resistance. Rds(on)

 7.3. Size:634K  elm
 elm36400ea.pdf pdf_icon

ELM36405EA

Single N-channel MOSFETELM36400EA-SGeneral description Features ELM36400EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on)

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Datasheet: ELM34810AA , ELM34812AA , ELM35601KA , ELM35603KA , ELM35604KA , ELM36400EA , ELM36402EA , ELM36403EA , 2SK3918 , ELM36800EA , ELM3C0660A , ELM3C0850A , ELM3C1260A , ELM3C1350A , ELM51400FA-S , ELM51401FA , ELM51402FA .

History: AP73T02GH-HF | TPC8118 | ELM5K8473A | IPB60R380C6 | UF840KL-TA3-R | DH135N10P | OSG65R200HF

Keywords - ELM36405EA MOSFET datasheet

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