All MOSFET. ELM529575A Datasheet

 

ELM529575A MOSFET. Datasheet pdf. Equivalent


   Type Designator: ELM529575A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: TO-252-3

 ELM529575A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ELM529575A Datasheet (PDF)

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 elm529575a.pdf

ELM529575A ELM529575A

Single P-channel MOSFETELM529575A-SGeneral description Features ELM529575A-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-18A resistance. Rds(on) = 68m (Vgs=-10V) Rds(on) = 78m (Vgs=-4.5V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source voltage Vds -60 VGate-source voltage Vg

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History: SSM3J02T | SSF22N50A | MTP2311M3 | SI3424BDV | SSM3K03FE

 

 
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