ELM549407A Specs and Replacement
Type Designator: ELM549407A
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOP-8
ELM549407A substitution
- MOSFET ⓘ Cross-Reference Search
ELM549407A datasheet
elm549407a.pdf
Single P-channel MOSFET ELM549407A-N General description Features ELM549407A-N uses advanced trench technology to Vds=-60V provide excellent Rds(on), low gate charge and low gate Id=-4.6A resistance. Rds(on) ... See More ⇒
elm544539a.pdf
Complementary MOSFET ELM544539A-N General Description Features ELM544539A-N uses advanced trench technology N-channel to provide excellent Rds(on) and low gate charge. Vds=30V, Id=5.0A, Rds(on)=36m (Vgs=10V) Vds=30V, Id=4.7A, Rds(on)=46m (Vgs=4.5V) P-channel Vds=-30V, Id=-5.4A, Rds(on)=62m (Vgs=-10V) Vds=-30V, Id=-4.2A, Rds(on)=90m (Vgs=-4.5V) Maximum Absol... See More ⇒
elm544599a.pdf
Complementary MOSFET ELM544599A-N General Description Features ELM544599A-N uses advanced trench technology N-channel to provide excellent Rds(on) and low gate charge. Vds=40V, Id=8.0A, Rds(on)=22m (Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28m (Vgs=4.5V) P-channel Vds=-40V, Id=-7.2A, Rds(on)=42m (Vgs=-10V) Vds=-40V, Id=-6.2A, Rds(on)=60m (Vgs=-4.5V) Maximum Abso... See More ⇒
Detailed specifications: ELM53403CA, ELM53404CA-S, ELM53405CA-S, ELM53406CA, ELM544539A, ELM544599A, ELM544634A, ELM54801AA, IRFB4110, ELM56800EA, ELM56801EA, ELM57800GA, ELM57801GA, ELM58822SA, ELM588822A-S, ELM5B801QA, ELM5E400PA
Keywords - ELM549407A MOSFET specs
ELM549407A cross reference
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ELM549407A replacement
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History: JMSL030SPG | AOD502
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