All MOSFET. ELM56800EA Datasheet

 

ELM56800EA Datasheet and Replacement


   Type Designator: ELM56800EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT-26
 

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ELM56800EA Datasheet (PDF)

 ..1. Size:1274K  elm
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ELM56800EA

Dual N-channel MOSFETELM56800EA-SGeneral description Features ELM56800EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3.6A resistance. Rds(on) = 70m (Vgs=10V) Rds(on) = 78m (Vgs=4.5V) Rds(on) = 95m (Vgs=2.5V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source voltage Vds 30

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ELM56800EA

Dual P-channel MOSFETELM56801EA-SGeneral description Features ELM56801EA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3.2A, Rds(on)=100m (Vgs=-4.5V)resistance. Id=-2.6A, Rds(on)=135m (Vgs=-2.5V) Id=-1.5A, Rds(on)=190m (Vgs=-1.8V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-sou

Datasheet: ELM53404CA-S , ELM53405CA-S , ELM53406CA , ELM544539A , ELM544599A , ELM544634A , ELM54801AA , ELM549407A , IRF630 , ELM56801EA , ELM57800GA , ELM57801GA , ELM58822SA , ELM588822A-S , ELM5B801QA , ELM5E400PA , ELM5E401PA .

History: HY3312PM | ME6874-G | DTM4926 | NCE60N390I | FK3303010L | HGB042N10S | MX2N4861

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