ELM56800EA MOSFET Datasheet: N-Ch, 30V, 3.6A. Full specification with pinout and replacement list

ELM56800EA Specs and Replacement

Type Designator: ELM56800EA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOT-26

ELM56800EA substitution

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ELM56800EA datasheet

..1. Size:1274K elm
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Dual N-channel MOSFET ELM56800EA-S General description Features ELM56800EA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=3.6A resistance. Rds(on) = 70m (Vgs=10V) Rds(on) = 78m (Vgs=4.5V) Rds(on) = 95m (Vgs=2.5V) Maximum absolute ratings Parameter Symbol Limit Unit Drain-source voltage Vds 30... See More ⇒

7.1. Size:1223K elm
elm56801ea.pdf pdf_icon

Dual P-channel MOSFET ELM56801EA-S General description Features ELM56801EA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-3.2A, Rds(on)=100m (Vgs=-4.5V) resistance. Id=-2.6A, Rds(on)=135m (Vgs=-2.5V) Id=-1.5A, Rds(on)=190m (Vgs=-1.8V) Maximum absolute ratings Parameter Symbol Limit Unit Drain-sou... See More ⇒

Detailed specifications: ELM53404CA-S, ELM53405CA-S, ELM53406CA, ELM544539A, ELM544599A, ELM544634A, ELM54801AA, ELM549407A, IRF640N, ELM56801EA, ELM57800GA, ELM57801GA, ELM58822SA, ELM588822A-S, ELM5B801QA, ELM5E400PA, ELM5E401PA