All MOSFET. ELM57800GA Datasheet

 

ELM57800GA Datasheet and Replacement


   Type Designator: ELM57800GA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SC-70-6
 

 ELM57800GA substitution

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ELM57800GA Datasheet (PDF)

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ELM57800GA

Dual N-channel MOSFETELM57800GA-SGeneral description Features ELM57800GA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=1.8Aresistance. Rds(on)

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ELM57800GA

Dual P-channel MOSFETELM57801GA-SGeneral description Features ELM57801GA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-1.4Aresistance. Rds(on)

Datasheet: ELM53406CA , ELM544539A , ELM544599A , ELM544634A , ELM54801AA , ELM549407A , ELM56800EA , ELM56801EA , IRF3710 , ELM57801GA , ELM58822SA , ELM588822A-S , ELM5B801QA , ELM5E400PA , ELM5E401PA , ELM5E402PA , ELM5H1072A .

History: PB210BC | RQJ0305EQDQA | CHM730GPAGP | P057AAT | AON6266 | KRLML6401 | OSG65R260FSF-NB

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