All MOSFET. ELM57800GA Datasheet

 

ELM57800GA Datasheet and Replacement


   Type Designator: ELM57800GA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SC-70-6
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ELM57800GA Datasheet (PDF)

 ..1. Size:1306K  elm
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ELM57800GA

Dual N-channel MOSFETELM57800GA-SGeneral description Features ELM57800GA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=1.8Aresistance. Rds(on)

 7.1. Size:1303K  elm
 elm57801ga.pdf pdf_icon

ELM57800GA

Dual P-channel MOSFETELM57801GA-SGeneral description Features ELM57801GA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-1.4Aresistance. Rds(on)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: STE250N06 | HFP640 | 4N70KG-TMS2-T | STP36N06LFI | ZVN0124A | SWD4N70K2 | BLS6G3135S-20

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