ELM57800GA Specs and Replacement
Type Designator: ELM57800GA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: SC-70-6
ELM57800GA substitution
- MOSFET ⓘ Cross-Reference Search
ELM57800GA datasheet
elm57800ga.pdf
Dual N-channel MOSFET ELM57800GA-S General description Features ELM57800GA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=1.8A resistance. Rds(on) ... See More ⇒
elm57801ga.pdf
Dual P-channel MOSFET ELM57801GA-S General description Features ELM57801GA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-1.4A resistance. Rds(on) ... See More ⇒
Detailed specifications: ELM53406CA, ELM544539A, ELM544599A, ELM544634A, ELM54801AA, ELM549407A, ELM56800EA, ELM56801EA, AO3400, ELM57801GA, ELM58822SA, ELM588822A-S, ELM5B801QA, ELM5E400PA, ELM5E401PA, ELM5E402PA, ELM5H1072A
Keywords - ELM57800GA MOSFET specs
ELM57800GA cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: NCEP40P80K
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