ELM588822A-S PDF and Equivalents Search

 

ELM588822A-S Specs and Replacement

Type Designator: ELM588822A-S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TSSOP-8

ELM588822A-S substitution

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ELM588822A-S datasheet

 ..1. Size:1801K  elm
 elm588822a-s.pdf pdf_icon

ELM588822A-S

(common drain) Dual N-channel MOSFET ELM588822A-S General description Features ELM588822A-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=7.2A resistance. Rds(on) = 28m (Vgs=4.5V) Rds(on) = 32m (Vgs=2.5V) Rds(on) = 45m (Vgs=1.8V) Maximum absolute ratings Ta=25 C. Unless otherwise noted. Par... See More ⇒

 8.1. Size:1270K  elm
 elm58822sa.pdf pdf_icon

ELM588822A-S

(common drain) Dual N-channel MOSFET ELM58822SA-S General description Features ELM58822SA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=6.5A resistance. Rds(on) = 32m (Vgs=4.5V) Rds(on) = 35m (Vgs=2.5V) Maximum absolute ratings Parameter Symbol Limit Unit Drain-source voltage Vds 20 V Gate-sourc... See More ⇒

Detailed specifications: ELM544634A, ELM54801AA, ELM549407A, ELM56800EA, ELM56801EA, ELM57800GA, ELM57801GA, ELM58822SA, 10N60, ELM5B801QA, ELM5E400PA, ELM5E401PA, ELM5E402PA, ELM5H1072A, ELM5J400RA, ELM5K8471A, ELM5K8473A

Keywords - ELM588822A-S MOSFET specs

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