All MOSFET. ELM5B801QA Datasheet

 

ELM5B801QA Datasheet and Replacement


   Type Designator: ELM5B801QA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm
   Package: DFN6-2X2
 

 ELM5B801QA substitution

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ELM5B801QA Datasheet (PDF)

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ELM5B801QA

Dual P-channel MOSFETELM5B801QA-SGeneral description Features ELM5B801QA-N uses advanced trench Vds=-20Vtechnology to provide excellent Rds(on) Id=-4.5A, Rds(on)=96m (Vgs=-4.5V)and low gate charge. Id=-3.8A, Rds(on)=128m (Vgs=-2.5V) Id=-2.5A, Rds(on)=180m (Vgs=-1.8V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source voltage Vds -20 V

Datasheet: ELM54801AA , ELM549407A , ELM56800EA , ELM56801EA , ELM57800GA , ELM57801GA , ELM58822SA , ELM588822A-S , IRFB4110 , ELM5E400PA , ELM5E401PA , ELM5E402PA , ELM5H1072A , ELM5J400RA , ELM5K8471A , ELM5K8473A , EM6K1 .

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