ELM5B801QA Specs and Replacement
Type Designator: ELM5B801QA
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm
Package: DFN6-2X2
ELM5B801QA substitution
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ELM5B801QA datasheet
elm5b801qa.pdf
Dual P-channel MOSFET ELM5B801QA-S General description Features ELM5B801QA-N uses advanced trench Vds=-20V technology to provide excellent Rds(on) Id=-4.5A, Rds(on)=96m (Vgs=-4.5V) and low gate charge. Id=-3.8A, Rds(on)=128m (Vgs=-2.5V) Id=-2.5A, Rds(on)=180m (Vgs=-1.8V) Maximum absolute ratings Parameter Symbol Limit Unit Drain-source voltage Vds -20 V ... See More ⇒
Detailed specifications: ELM54801AA, ELM549407A, ELM56800EA, ELM56801EA, ELM57800GA, ELM57801GA, ELM58822SA, ELM588822A-S, AON6414A, ELM5E400PA, ELM5E401PA, ELM5E402PA, ELM5H1072A, ELM5J400RA, ELM5K8471A, ELM5K8473A, EM6K1
Keywords - ELM5B801QA MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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