All MOSFET. ELM5E400PA Datasheet

 

ELM5E400PA Datasheet and Replacement


   Type Designator: ELM5E400PA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: SOT-523
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ELM5E400PA Datasheet (PDF)

 ..1. Size:1304K  elm
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ELM5E400PA

Single N-channel MOSFETELM5E400PA-SGeneral description Features ELM5E400PA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=0.7Aresistance. Rds(on) = 360m (Vgs=4.5V) Rds(on) = 420m (Vgs=2.5V) Rds(on) = 560m (Vgs=1.8V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source voltage V

 7.1. Size:381K  elm
elm5e402pa.pdf pdf_icon

ELM5E400PA

Single N-channel MOSFETELM5E402PA-SGeneral description Features ELM5E402PA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=0.7Aresistance. Rds(on) = 360m (Vgs=4.5V) Rds(on) = 420m (Vgs=2.5V) Rds(on) = 560m (Vgs=1.8V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source voltage V

 7.2. Size:1300K  elm
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ELM5E400PA

Single P-channel MOSFETELM5E401PA-SGeneral description Features ELM5E401PA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-0.7A resistance. Rds(on) = 620m (Vgs=-4.5V) Rds(on) = 860m (Vgs=-2.5V) Rds(on) = 1450m (Vgs=-1.8V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source vo

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: UF830KG-TA3-T | STM6920 | DMN2400UV | HGS750N15ML | STM4439A | MTN2510LE3 | IXFP230N075T2

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