ELM5E400PA Datasheet and Replacement
Type Designator: ELM5E400PA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: SOT-523
ELM5E400PA substitution
ELM5E400PA Datasheet (PDF)
elm5e400pa.pdf

Single N-channel MOSFETELM5E400PA-SGeneral description Features ELM5E400PA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=0.7Aresistance. Rds(on) = 360m (Vgs=4.5V) Rds(on) = 420m (Vgs=2.5V) Rds(on) = 560m (Vgs=1.8V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source voltage V
elm5e402pa.pdf

Single N-channel MOSFETELM5E402PA-SGeneral description Features ELM5E402PA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=0.7Aresistance. Rds(on) = 360m (Vgs=4.5V) Rds(on) = 420m (Vgs=2.5V) Rds(on) = 560m (Vgs=1.8V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source voltage V
elm5e401pa.pdf

Single P-channel MOSFETELM5E401PA-SGeneral description Features ELM5E401PA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-0.7A resistance. Rds(on) = 620m (Vgs=-4.5V) Rds(on) = 860m (Vgs=-2.5V) Rds(on) = 1450m (Vgs=-1.8V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source vo
Datasheet: ELM549407A , ELM56800EA , ELM56801EA , ELM57800GA , ELM57801GA , ELM58822SA , ELM588822A-S , ELM5B801QA , IRFP250N , ELM5E401PA , ELM5E402PA , ELM5H1072A , ELM5J400RA , ELM5K8471A , ELM5K8473A , EM6K1 , EM6K31 .
History: 2SK2927
Keywords - ELM5E400PA MOSFET datasheet
ELM5E400PA cross reference
ELM5E400PA equivalent finder
ELM5E400PA lookup
ELM5E400PA substitution
ELM5E400PA replacement
History: 2SK2927



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