ELM5E400PA Specs and Replacement
Type Designator: ELM5E400PA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: SOT-523
ELM5E400PA substitution
- MOSFET ⓘ Cross-Reference Search
ELM5E400PA datasheet
elm5e400pa.pdf
Single N-channel MOSFET ELM5E400PA-S General description Features ELM5E400PA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=0.7A resistance. Rds(on) = 360m (Vgs=4.5V) Rds(on) = 420m (Vgs=2.5V) Rds(on) = 560m (Vgs=1.8V) Maximum absolute ratings Parameter Symbol Limit Unit Drain-source voltage V... See More ⇒
elm5e402pa.pdf
Single N-channel MOSFET ELM5E402PA-S General description Features ELM5E402PA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=0.7A resistance. Rds(on) = 360m (Vgs=4.5V) Rds(on) = 420m (Vgs=2.5V) Rds(on) = 560m (Vgs=1.8V) Maximum absolute ratings Parameter Symbol Limit Unit Drain-source voltage V... See More ⇒
elm5e401pa.pdf
Single P-channel MOSFET ELM5E401PA-S General description Features ELM5E401PA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-0.7A resistance. Rds(on) = 620m (Vgs=-4.5V) Rds(on) = 860m (Vgs=-2.5V) Rds(on) = 1450m (Vgs=-1.8V) Maximum absolute ratings Parameter Symbol Limit Unit Drain-source vo... See More ⇒
Detailed specifications: ELM549407A, ELM56800EA, ELM56801EA, ELM57800GA, ELM57801GA, ELM58822SA, ELM588822A-S, ELM5B801QA, IRFB4115, ELM5E401PA, ELM5E402PA, ELM5H1072A, ELM5J400RA, ELM5K8471A, ELM5K8473A, EM6K1, EM6K31
Keywords - ELM5E400PA MOSFET specs
ELM5E400PA cross reference
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