ELM5E400PA - параметры транзистора MOSFET, его аналоги, datasheet

ELM5E400PA Datasheet (PDF)

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Single N-channel MOSFETELM5E400PA-SGeneral description Features ELM5E400PA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=0.7Aresistance. Rds(on) = 360m (Vgs=4.5V) Rds(on) = 420m (Vgs=2.5V) Rds(on) = 560m (Vgs=1.8V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source voltage V

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Single N-channel MOSFETELM5E402PA-SGeneral description Features ELM5E402PA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=0.7Aresistance. Rds(on) = 360m (Vgs=4.5V) Rds(on) = 420m (Vgs=2.5V) Rds(on) = 560m (Vgs=1.8V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source voltage V

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Single P-channel MOSFETELM5E401PA-SGeneral description Features ELM5E401PA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-0.7A resistance. Rds(on) = 620m (Vgs=-4.5V) Rds(on) = 860m (Vgs=-2.5V) Rds(on) = 1450m (Vgs=-1.8V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source vo

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