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EM6K6 Specs and Replacement

Type Designator: EM6K6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.12 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: EMT6

EM6K6 substitution

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EM6K6 datasheet

 ..1. Size:78K  rohm
 em6k6.pdf pdf_icon

EM6K6

EM6K6 Transistor 1.8V Drive Nch+Nch MOSFET EM6K6 Structure Dimensions (Unit mm) Silicon N-channel EMT6 MOSFET Applications Switching Features Each lead has same dimensions 1) The MOSFET elements are independent, Abbreviated symbol K06 eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (... See More ⇒

Detailed specifications: ELM5H1072A, ELM5J400RA, ELM5K8471A, ELM5K8473A, EM6K1, EM6K31, EM6K33, EM6K34, 2N7002, EM6K7, EMH2314, EMH2417R, EMH2418R, ES6U2, ES6U3, ES6U41, ES6U42

Keywords - EM6K6 MOSFET specs

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