All MOSFET. EM6K6 Datasheet

 

EM6K6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: EM6K6
   Marking Code: K06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: EMT6

 EM6K6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EM6K6 Datasheet (PDF)

 ..1. Size:78K  rohm
em6k6.pdf

EM6K6
EM6K6

EM6K6 Transistor 1.8V Drive Nch+Nch MOSFET EM6K6 Structure Dimensions (Unit : mm) Silicon N-channel EMT6MOSFET Applications Switching Features Each lead has same dimensions1) The MOSFET elements are independent, Abbreviated symbol : K06eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: AOT424 | AOT7N60

 

 
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