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EM6K7 Specs and Replacement

Type Designator: EM6K7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.12 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: EMT6

EM6K7 substitution

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EM6K7 datasheet

 ..1. Size:153K  rohm
 em6k7.pdf pdf_icon

EM6K7

1.2V Drive Nch+Nch MOSFET EM6K7 Structure Dimensions (Unit mm) Silicon N-channel EMT6 MOSFET Applications Switching Features 1) The MOSFET elements are independent, Each lead has same dimensions eliminating mutual interference. Abbreviated symbol K07 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for portable ... See More ⇒

Detailed specifications: ELM5J400RA, ELM5K8471A, ELM5K8473A, EM6K1, EM6K31, EM6K33, EM6K34, EM6K6, IRF9540N, EMH2314, EMH2417R, EMH2418R, ES6U2, ES6U3, ES6U41, ES6U42, F10F50VX2

Keywords - EM6K7 MOSFET specs

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