All MOSFET. EMH2314 Datasheet

 

EMH2314 Datasheet and Replacement


   Type Designator: EMH2314
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: EMH8
 

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EMH2314 Datasheet (PDF)

 ..1. Size:915K  onsemi
 emh2314.pdf pdf_icon

EMH2314

Ordering number : EN8759AEMH2314Power MOSFEThttp://onsemi.com 12V, 37m , 5A, Dual P-ChannelFeatures ON-resistance RDS(on)1=28m (typ.) Halogen free compliance 1.8V drive Protection Diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Value UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VG

 9.1. Size:486K  sanyo
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EMH2314

EMH2308Ordering number : ENA1445SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2308ApplicationsFeatures The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParamete

Datasheet: ELM5K8471A , ELM5K8473A , EM6K1 , EM6K31 , EM6K33 , EM6K34 , EM6K6 , EM6K7 , IRF4905 , EMH2417R , EMH2418R , ES6U2 , ES6U3 , ES6U41 , ES6U42 , F10F50VX2 , F10V50VX2 .

History: SVT25600NF

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