EMH2314 Specs and Replacement
Type Designator: EMH2314
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 158 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: EMH8
EMH2314 substitution
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EMH2314 datasheet
emh2314.pdf
Ordering number EN8759A EMH2314 Power MOSFET http //onsemi.com 12V, 37m , 5A, Dual P-Channel Features ON-resistance RDS(on)1=28m (typ.) Halogen free compliance 1.8V drive Protection Diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Value Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VG... See More ⇒
emh2308.pdf
EMH2308 Ordering number ENA1445 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device EMH2308 Applications Features The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive. Specifications at Ta=25 C Absolute Maximum Ratings Paramete... See More ⇒
Detailed specifications: ELM5K8471A, ELM5K8473A, EM6K1, EM6K31, EM6K33, EM6K34, EM6K6, EM6K7, IRF4905, EMH2417R, EMH2418R, ES6U2, ES6U3, ES6U41, ES6U42, F10F50VX2, F10V50VX2
Keywords - EMH2314 MOSFET specs
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