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ES6U2 Specs and Replacement

Type Designator: ES6U2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: WEMT6

ES6U2 substitution

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ES6U2 datasheet

 ..1. Size:166K  rohm
 es6u2.pdf pdf_icon

ES6U2

1.5V Drive Nch+SBD MOSFET ES6U2 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / WEMT6 Schottky barrier diode (6) (5) (4) Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. (1) (2) (3) 3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode. Abbriviated symbol U02 ... See More ⇒

Detailed specifications: EM6K31, EM6K33, EM6K34, EM6K6, EM6K7, EMH2314, EMH2417R, EMH2418R, K3569, ES6U3, ES6U41, ES6U42, F10F50VX2, F10V50VX2, F10W50, F10W50C, F10W90HVX2

Keywords - ES6U2 MOSFET specs

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