All MOSFET. ES6U2 Datasheet

 

ES6U2 Datasheet and Replacement


   Type Designator: ES6U2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: WEMT6
 

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ES6U2 Datasheet (PDF)

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ES6U2

1.5V Drive Nch+SBD MOSFET ES6U2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / WEMT6Schottky barrier diode (6) (5) (4) Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. (1) (2) (3)3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode. Abbriviated symbol : U02

Datasheet: EM6K31 , EM6K33 , EM6K34 , EM6K6 , EM6K7 , EMH2314 , EMH2417R , EMH2418R , SPP20N60C3 , ES6U3 , ES6U41 , ES6U42 , F10F50VX2 , F10V50VX2 , F10W50 , F10W50C , F10W90HVX2 .

History: P2610ATFG | MTN15N50F3 | OSG60R2K8DF | IXFN100N10S1 | IXTA76N075T | AON6360 | CED01N7

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